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參數(shù)資料
| 型號： | MJ11033R1 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 50 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 59K |
| 代理商： | MJ11033R1 |
Prelim. 2/96
LAB
SEME
NPN
MJ11028
MJ11030
MJ11032
PNP
MJ11029
MJ11031
MJ11033
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
VCEO
Collector – Emitter Voltage
VCBO
Collector – Base Voltage
VEBO
Emitter – Base Voltage
IC
Continuous Collector Current
ICM
Peak Collector Current
IB
Base Current
Ptot
Total Dissipation at Tcase = 25°C
Derate above 25°C
TSTG , TJ
Operating and Storage Junction Temperature Range
60V
90V
120V
MJ11028
MJ11029
MJ11030
MJ11031
MJ11032
MJ11033
5V
50A
100A
2A
300W
1.71W/°C
–55 to +175°C
MECHANICAL DATA
Dimensions in mm (inches)
12
30
.1
5
(1
.1
87)
16.
8
9
(0
.6
6
5
)
10.92
(0.430)
25.4
(1.0)
4.0 ± 0.1
(0.157 ± 0.004)
1.57
(0.062)
11.65 ± 0.35
(0.459 ± 0.014)
+0.016
–0
(0.161
)
4.1
+0.4
–0
9.0
(0.354)
0.127
(0.005)
unless otherwise stated
Tolerance ±
COMPLEMENTARY
DARLINGTON
POWER TRANSISTOR
FEATURES
HIGH DC CURRENT GAIN
HFE = 1000 Min @ IC = 25A
HFE = 400 Min 0@ IC = 50A
CURVES TO 100A (Pulsed)
DIODE PROTECTION TO RATED IC
MONOLITHIC CONSTRUCTION WITH
BUILT-IN BASE – EMITTER SHUNT RESISTOR
JUNCTION TEMPERATURE TO +200°C
Pin 1 – Base
TO–3
Pin 2 – Emitter
Case – Collector
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
APPLICATIONS
For use as output devices in complementary
general purpose amplifier applications.
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