參數(shù)資料
型號： MJ10012-BP
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 功率晶體管
英文描述： 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-3
封裝： TO-3, 3 PIN
文件頁數(shù)： 1/1頁
文件大?。?/td> 91K
代理商： MJ10012-BP
MJ10012
NPN Silicon Power
Darlington Transistor
Features
With TO-3 package
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
400
V
VCBO
Collector-Base Voltage
600
V
VEBO
Emitter-Base Voltage
8.0
V
IC
Collector Current
10
A
PC
Collector power dissipation
175
W
TJ
Junction Temperature
200
℃
TSTG
Storage Temperature
-65 to +200
℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
VCEO(SUS)
Collector-Emitter Breakdown Voltage
(IC=200mAdc, IB=0)
400
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=600Vdc,IE=0)
---
1.0
mAdc
IEBO
Emitter-Base Cutoff Current
(VEB=6.0Vdc, IC=0)
---
40
mAdc
ICEO
Collector-emitter Cutoff Current
(VCE=400V; IB=0)
---
1.0
mAdc
ON CHARACTERISTICS
hFE
Forward Current Transfer ratio
(IC=3.0Adc, VCE=6.0Vdc)
(IC=6.0Adc, VCE=6.0Vdc)
(IC=10Adc, VCE=6.0Vdc)
300
100
20
2000
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=3.0Adc, IB=0.6Adc)
(IC=6.0Adc, IB=0.6Adc)
(IC=10Adc, IB=2.0Adc)
1.5
2.0
2.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=6.0Adc, IB=0.6Adc)
(IC=10Adc, IB=2.0Adc)
2.5
3.0
Vdc
DYNAMIC CHARACTERISTICS
Cob
Output Capacitance
(Vcb=10Vdc, IE=0, ftest=100kHz)
350
pF
SWITCHING CHARACTERISTICS
ts
Storage Time
(VCC = 12 Vdc,
IC = 6.0 Adc, IB1 = IB2 = 0.3 Adc)
15
s
tf
Fall Time
(VCC = 12 Vdc,
IC = 6.0 Adc, IB1 = IB2 = 0.3 Adc)
15
s
TO-3
A
N
E
D
C
K
PIN 1.
BASE
PIN 2.
EMITTER
CASE.
COLLECTOR
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
1.550
REF
39.37
REF
B
-----
1.050
-----
26.67
C
.250
.335
6.35
8.51
D
.038
.043
0.97
1.09
E
0.55
0.70
1.40
1.77
G
.430
BSC
10.92
BSC
H
.215
BSC
5.46
BSC
K
.440
.480
11.18
12.19
L
.665
BSC
16.89
BSC
N
-----
.830
-----
21.08
Q
.151
.165
3.84
4.19
U
1.187
BSC
30.15
BSC
V
.131
.188
3.33
4.77
H
V
U
L
G
B
Q
1
2
omponents
20736 Marilla
Street Chatsworth
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MCC
www.mccsemi.com
Revision: 1
2003/04/21
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