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參數(shù)資料
| 型號： | MJ10000 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | METAL, TO-3, 2 PIN |
| 文件頁數(shù)： | 56/63頁 |
| 文件大?。?/td> | 394K |
| 代理商： | MJ10000 |
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MJ10000
3–438
Motorola Bipolar Power Transistor Device Data
The Safe Operating Area figures shown in Figures 11 and 12 are
specified for these devices under the test conditions shown.
50
4.0
Figure 11. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
3.0
1.0
0.5
0.1
0.02
7.0 10
20
30
70
400
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN LIMITED
50
0.005
I C
,COLLECT
OR
CURRENT
(AMPS)
TC = 25°C
dc
0.2
100
200
350
100
s
10
s
20
0
Figure 12. Reverse Bias Switching
Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
16
12
0
500
4
I C
,COLLECT
OR
CURRENT
(AMP)
8
300
400
100
200
VBE(off) = 5 V
TURN OFF LOAD LINE
BOUNDARY FOR MJ10001.
THE LOCUS FOR MJ10000
IS 50 V LESS
1 ms
5 ms
CURVES APPLY BELOW RATED VCEO
MJ10000
MJ10001
VBE(off) = 2 V
VBE(off) = 0 V
TJ v 100°C
0.01
0.05
20
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 11 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at
the voltages shown on Figure 11 may be found at any case
temperature by using the appropriate curve on Figure 13.
TJ(pk) may be calculated from the data in Figure 10. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as VCEX(sus) at a given collector current
and represents a voltage–current condition that can be sus-
tained during reverse biased turn–off. This rating is verified
under clamped conditions so that the device is never sub-
jected to an avalanche mode. Figure 12 gives the complete
reverse bias safe operating area characteristics.
100
80
60
20
0
40
80
120
200
Figure 13. Power Derating
TC, CASE TEMPERATURE (°C)
POWER
DERA
TING
FACT
OR
(%)
THERMAL DERATING
SECOND BREAKDOWN
DERATING
160
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PDF描述 |
|---|---|
| MJ1000 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| MJ1001 | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| MJ10022 | 40 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| MJ3000 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| MJ2500 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJ10001 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:50; Operating Temperature Min:-65C; Operating Temperature Max:200C ;RoHS Compliant: Yes |
| MJ10002 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| MJ10003 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| MJ10004 | 制造商:SPC Multicomp 功能描述:DARLINGTON TRANSISTOR TO-3 |
| MJ10004 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 |
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