參數(shù)資料
型號(hào)： MJ10000
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： 20 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封裝： METAL, TO-3, 2 PIN
文件頁(yè)數(shù)： 45/63頁(yè)
文件大?。?/td> 394K
代理商： MJ10000
MJ10000
3–437
Motorola Bipolar Power Transistor Device Data
SWITCHING TIMES NOTE (continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi ] tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25
_C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.
3
Figure 8. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
t,
T
IME
(
s)
2
0.7
0.1
320
0.2
15
td
tr
27
1
0.3
0.5
2
Figure 9. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
t,TIME
(
s)
0.7
0.2
0.1
VBF(off) = 5 V
VCC = 250 V
IC/IB = 25
TJ = 25°C
tf
ts
0.3
0.5
VBE(off) = 5 V
VCC = 250 V
IC/IB = 25
TJ = 25°C
10
3
20
15
27
10
1
RESISTIVE SWITCHING PERFORMANCE
Figure 10. Thermal Response
t, TIME (ms)
1.0
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
θJC (t) = r(t) RθJC
R
θJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) Z
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
r(t),
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
相關(guān)PDF資料
PDF描述
MJ1000 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
MJ1001 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA
MJ10022 40 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AE
MJ3000 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
MJ2500 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ10001 制造商:NTE Electronics 功能描述:TRANSISTOR NPN 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:50; Operating Temperature Min:-65C; Operating Temperature Max:200C ;RoHS Compliant: Yes
MJ10002 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor
MJ10003 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor
MJ10004 制造商:SPC Multicomp 功能描述:DARLINGTON TRANSISTOR TO-3
MJ10004 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3
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