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參數(shù)資料
| 型號(hào)： | MIG10J805H |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT |
| 封裝： | MODULE-20 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 30K |
| 代理商： | MIG10J805H |
TOSHIBA
MIG10J805H
1997-08-07
2/3
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTICS
STAGE
SYMBOL
RATING
UNIT
Inverter
Converter
Module
Collector-Emitter Voltage
VCES
600
V
Gate-Emitter Voltage
VGES
±20
V
Collector Current
DC
IC
10
A
1 ms
ICP
20
A
Forward Current
DC
IF
10
A
1 ms
IFM
20
A
Collector Power Dissipation (Tc=25°C)
PC
40
W
Repetitive Peak Reverse Voltage
VRRM
800
V
Average Output Rectified Current
IO
20
A
Peak One Cycle Surge Forward
IFSM
250
A
Current (50Hz, Non-Repetitive)
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
-40 ~ 125
°C
Isolation Voltage
VIsol
2500V (AC 1MIN)
V
Screw Torque
—
1.5
N/m
ELECTRICAL CHARACTERISTICS (Tc=125°C)
a. Inverter stage
CHARACTERISTICS
SYMBOL
TEST CONDITION
UNIT
MAX.
TYP.
MIN.
Gate Leakage Current
IGES
VGE=±20V, VCE=0
—
±500
nA
Collector Cut-off Current
ICES
VCE=600V, VGE=0
—
1.0
mA
Gate-Emitter Cut-off Voltage
VGE (OFF)
IC=1mA, VCE=5V
5.0
—
8.0
V
Collector-Emitter Saturation Voltage
VCE (sat)
IC=10A, VGE=15V
—
2.10
2.80
V
Input Capacitance
Cies
VCE=10V, VGE=0, f=1MHz
———
pF
Rise Time
tr
VCC=300V
—
0.07
0.15
Switching Time
Turn-on Time
ton
IC-10A
—
0.15
0.30
s
Fall Time
tf
VGE=±15V
—
0.10
0.30
Turn-off Time
toff
RG=150
—
0.50
1.00
Forward Voltage
VF
IF=10A, VGE=0
—
2.30
2.80
V
Reverse Recovery Time
trr
IF=10A, VGE=-10V
—
0.08
0.15
s
di/dt=50A/s
Thermal Resistance
Rth (j-c)
Transistor
—
3.09
°C/W
Diode
—
3.9
(Note 1)
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