參數(shù)資料
型號(hào): MIG10J805H
元件分類: IGBT 晶體管
英文描述: IGBT
封裝: MODULE-20
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 30K
代理商: MIG10J805H
TOSHIBA
MIG10J805H
MIG10J805H
TOSHIBA INTEGRATED 1GBT MODULE SILICON N CHANNEL 1GBT
1997-08-07
1/3
TENTATIVE
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
EQUIVALENT CIRCUIT
Units in mm
q
Integrates Inverter, Converter Power Circuits in
One Package
q
Output (Inverter Stage):
3 10A/600V High Speed Type 1GBT
VCE (sat) = 2.80V (Max.)
tf = 0.30s (Max.)
trr = 0.15s (Max.)
q
Input (Converter Stage):
3 20A/800V Silicon Rectifier
VF = 1.30V (Max.)
q
The Electrodes are Isolated from Case
JEDEC
EIAJ
TOSHIBA
Weight: 66g
961001EAAT
q TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA
product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA
products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the
precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
q The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license
is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
q The information contained herein is subject to change without notice.
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