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參數(shù)資料
| 型號： | MIC94053YC6 |
| 廠商： | MICREL INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 6 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SC-70, 6 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 214K |
| 代理商： | MIC94053YC6 |
June 2008
3
M9999-060508
MIC94052/53
Absolute Maximum Ratings (Note 1)
Drain-Source Voltage (VDS) ..........................................–6V
Gate-Source Voltage (VGS) ...........................................–6V
Continuous Drain Current (ID)
Note 3
TA = 25°C................................................................... ±2A
TA = 85°C................................................................ ±1.4A
Pulsed Drain Current (IDP) Note 3 ................................ ±6A
Continous Diode Current (IS) Note 7........................ –50mA
Power Dissipation
Note 3
SC-70-6 lead (TA = 85°C) ....................................270mW
Ambient Storage Temperature (TS).......... –55°C to +150°C
ESD Rating
Note 4
Operating Ratings (Note 2)
Input Voltage Range.........................................1.8V to 5.5V
Junction Temperature Range (TJ) ............ –40°C to +150°C
Package Thermal Impedance
Note 3
θJA SC-70-6 lead ..............................................240°C/W
Electrical Characteristics
TA = 25°C, unless otherwise specied. Bold values indicate –40°C≤TJ≤+150°C.
Symbol
Parameter
Condition
Min
Typ
Max
Units
Static
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250A
–0.5
–1.2
V
IGSS
Gate Body Leakage
VDS = 0V, VGS = –5.5V
100
nA
(MIC94052 only)
RGS
Gate-Source Resistance
VDS = 0V, VGS = –5.5V
250
400
550
k
(MIC94053 only)
IDSS
Zero Gate Voltage Drain
VDS = –5.5V, VGS = 0V
–1
A
Current
TJ = +85°C
–5
A
RDS(ON)
Drain-Source On-Resistance
VGS = –4.5V, IDS = –100 mA
70
84
m
Note 8
VGS = –3.6V, IDS = –100 mA
76
110
m
VGS = –2.5V, IDS = –100 mA
92
130
m
VGS = –1.8V, IDS = –100 mA
125
180
m
Dynamic, Note 6
td(on)
Turn-On Delay Time
VDD = –5V, ID = –0.5A, VGS = –4.5V,
15
ns
RGEN = 50
tr
Turn-On Rise Time
VDD = –5V, ID = –0.5A, VGS = –4.5V,
15
ns
RGEN = 50
td(off)
Turn-Off Delay Time
VDD = –5V, ID = –0.5A, VGS = –4.5V,
60
ns
RGEN = 50
tf
Turn-Off Fall Time
VDD = –5V, ID = –0.5A, VGS = –4.5V,
20
ns
RGEN = 50
Note 1. TA = 25°C unless otherwise noted. Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical
specications do not apply when operating the device outside of its operating ratings.
Note 2. This device is not guaranteed to operate beyond its specied operating rating.
Note 3. Mounted on 1 square-inch pad of 2 oz. copper.
Note 4. IC devices are inherently ESD sensitive. Handling precautions required.
Note 5. Pulse test; pulse width = 300s, duty cycle = 2%.
Note 6. Guaranteed by design.
Note 7. Body diode current conduction is not recommended.
Note 8. Ensure that all drain pins are connected together to optimize RDS(ON) perfomance.
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| MIC94053YC6 TR | 功能描述:MOSFET 1.8V-rated SC70-6 PFET w/Vgs pull-up - Lead Free RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MIC94053YC6TR | 制造商:Rochester Electronics LLC 功能描述: 制造商:RF Micro Devices Inc 功能描述: |
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