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參數(shù)資料
| 型號(hào)： | MHW912 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 衰減器 |
| 英文描述： | 12.5 W 884 to 915 MHz RF POWER AMPLIFIER |
| 中文描述： | 884 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 128K |
| 代理商： | MHW912 |
MHW912
4
MOTOROLA RF DEVICE DATA
APPLICATIONS INFORMATION
NOMINAL OPERATION
All electrical specifications are based on the nominal
conditions of Vb= Vs1= 8.0 Vdc (Pins 2, 4), and Vs2 =
Vs3= 12.5 Vdc (Pins 3, 5). With these conditions, maximum
current density on any device is 1.5 x 105 A/cm2 and
maximum die temperature is 165
°
C. While the modules
are designed to have excess gain margin with ruggedness,
operation of these units outside the published specifica-
tions is not recommended unless prior communications
regarding intended use have been made with the factory
representative.
GAIN CONTROL
The module output power should be limited to specified
value. The preferred method of power control is to fix Vb =
Vs1 = 8.0 Vdc (Pins 2, 4), Vs2 = Vs3 = 12.5 Vdc (Pins 3, 5),
Pin (Pin 1) at 1.0 mW, and vary Vcont (Pin 1) voltage.
DECOUPLING
Due to the high gain of the five stages and the module size
limitation, external decoupling networks require careful con-
sideration. Pins 2, 3, 4, and 5 are internally bypassed with a
0.018
μ
F chip capacitor which is effective for frequencies
from 5.0 MHz through 940 MHz. For bypassing frequencies
below 5.0 MHz, networks equivalent to that shown in Figure
1 are recommended. Inadequate decoupling will result in
spurious outputs at certain operating frequencies and certain
phase angles of input and output VSWR.
LOAD MISMATCH
During final test, each module is load mismatch tested in a
fixture having the identical decoupling networks described in
Figure 1. Electrical conditions are Vb = Vs1 = 8.0 V (Pins 2,
4), and Vs2 = Vs3 = 15.6 Vdc (Pins 3, 5), Pin = 3.0 mW,
VSWR equal to 10:1, and output power equal to 15 watts.
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