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參數(shù)資料
| 型號： | MHW912 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 衰減器 |
| 英文描述： | 12.5 W 884 to 915 MHz RF POWER AMPLIFIER |
| 中文描述： | 884 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 128K |
| 代理商： | MHW912 |
1
MHW912
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed specifically for the Pan European digital 8.0 watt, GSM mobile
radio. Other applications exist in standard analog cellular radios. The MHW912
is capable of wide power range control, operates from a 12.5 volt supply and
requires only 1.0 mW of RF input power.
Specified 12.5 Volt Characteristics:
RF Input Power — 1.0 mW (0 dBm)
RF Output Power — 12.5 W
Minimum Gain — 41 dB
Harmonics — –30 dBc Max @ 2.0 fo
New Biasing and Control Techniques Providing Dynamic Range
and Control Circuit Bandwidth Ideal for GSM
Low Control Current
50 Ohm Input/Output Impedances
Guaranteed Stability and Ruggedness
Test fixture circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
(Flange Temperature = 25
°
C)
Rating
Symbol
Value
Unit
DC Supply Voltage
Vs1, b
Vs2, 3
Vcont
Pin
Pout
TC
Tstg
8.5
Vdc
DC Supply Voltage — With RF Applied/Without RF Applied
15.6/30
Vdc
DC Control Voltage
4.0
Vdc
RF Input Power
3.0
mW
RF Output Power (Vs = 15.6 Vdc)
Operating Case Temperature Range
14
W
– 30 to +100
°
C
°
C
Storage Temperature Range
– 30 to +100
ELECTRICAL CHARACTERISTICS
(Vs2 = Vs3 = 12.5 Vdc; Vs1 = Vb = 8.0 Vdc; TC = +25
°
C, 50 ohm system, unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Frequency Range
BW
Pout1
Pout2
884
915
MHz
Output Power (Pin = 1.0 mW; Vcont = 3.0 Vdc)
Output Power, Reduced Voltage
(Pin = 1.0 mW; Vcont = 3.0 Vdc; Vs1 = Vb = 8.0 V; Vs2 = Vs3 = 10.8 Vdc)
Control Current (Pout = 12.5 W; Pin = 1.0 mW) (1)
Current Consumption in 8.0 V Pins (Pout = 12.5 W; Pin = 1.0 mW)
Leakage Current (Pin = 0 mW; Vcont = 0; Vs1 = Vb = 0)
Efficiency (Pout = 12.5 W; Pin = 1.0 mW) (1)
12.5
—
W
8.5
—
W
Icont
Is1 + Ib
IL
η
—
1.0
mA
—
220
mA
—
1.0
mA
f = 890–915 MHz
f = 884–890 MHz
35
33
—
—
%
Input VSWR (Pout = 0.03 to 12.5 W; Pin = 1.0 mW) (1)
Harmonics (Pout = 12.5 W; Pin = 1.0 mW) (1)
VSWRin
—
—
2.0:1
—
2 fo
3 fo
—
—
– 30
– 40
dBc
Noise Power (In 30 kHz Bandwidth, 20 MHz Above fo;
Pout = 12.5 W; Pin = 1.0 mW) (1)
NOTE:
1. Adjust Vcont for specified Pout; Duty Cycle = 12.5%, Period = 4.6 ms.
—
—
– 70
dBm
Order this document
by MHW912/D
SEMICONDUCTOR TECHNICAL DATA
12.5 W
884 to 915 MHz
RF POWER
AMPLIFIER
CASE 301R–01, STYLE 1
REV 6
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