參數(shù)資料
型號(hào): MH16D72AKLB-75
廠商: Mitsubishi Electric Corporation
英文描述: JT 41C 41#20 PIN GRND PLUG
中文描述: 1,207.959,552位(16,777,216 - Word的72位),雙數(shù)據(jù)速率同步DRAM模塊
文件頁(yè)數(shù): 31/39頁(yè)
文件大?。?/td> 348K
代理商: MH16D72AKLB-75
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
MH16D72AKLB-10,75
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
MIT-DS-0397-1.1
24.Nov.2000
Preliminary Spec.
Some contents are subject to change without notice.
31
[Write interrupted by Precharge]
Burst write operation can be interrupted by precharge of the same or all bank. Random column access is
allowed. tWR is referenced from the first positive CLK edge after the last data input.
Command
Write Interrupted by Precharge (BL=8, CL=2.5)
A0-9,11
A10
BA0,1
DQ
WRITE
Yi
0
00
PRE
00
Dai0
Dai1
QS
DM
tWR
/CLK
CLK
Module input and output timing.
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