參數(shù)資料
型號(hào): MGSF3454VT1
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 4.2 A, 30 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TSOP-6
文件頁(yè)數(shù): 1/13頁(yè)
文件大?。?/td> 167K
代理商: MGSF3454VT1
Publication Order Number:
MGSF3454VT1/D
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 1
349
MGSF3454VT1
Preferred Device
Power MOSFET
4 Amps, 30 Volts
N–Channel TSOP–6
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dc – dc converters, power management in portable and
battery–powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature TSOP–6 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
30
Vdc
Gate–to–Source Voltage – Continuous
VGS
± 20
Vdc
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp ≤ 10 s)
ID
IDM
4.2
20
A
Total Power Dissipation @ TA = 25°C
Mounted on FR4 t
≤ 5 sec
PD
2.0
W
Operating and Storage Temperature
Range
TJ, Tstg
– 55 to
150
°C
Thermal Resistance – Junction–to–Ambient
R
θJA
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
TL
260
°C
3
4
6
5
2
1
Device
Package
Shipping
ORDERING INFORMATION
MGSF3454VT1
TSOP–6
3000 Tape & Reel
N–Channel
TSOP–6
CASE 318G
STYLE 1
http://onsemi.com
W
MARKING
DIAGRAM
3P
= Device Code
W
= Work Week
PIN ASSIGNMENT
Preferred devices are recommended choices for future use
and best overall value.
3
2
1
4
Gate
Drain
Source
4 AMPERES
30 VOLTS
RDS(on) = 65 m
6
5
4
1
2
3
5
6
Drain
相關(guān)PDF資料
PDF描述
MGSF3454V 4.2 A, 30 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
MGSF3454XT1 1750 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MGSF3454X 1750 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MGSF3455VT1 3.5 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET
MGSF3455VT3 3.5 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET
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