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參數(shù)資料
| 型號： | MGP4N60ED |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 6 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 121K |
| 代理商： | MGP4N60ED |
MGP4N60ED
4
Motorola IGBT Device Data
Figure 5. Capacitance Variation
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
Figure 7. Total Energy Losses versus
Gate Resistance
Figure 8. Total Energy Losses versus
Junction Temperature
45
5
RG, GATE RESISTANCE (OHMS)
0.20
0.15
TJ, JUNCTION TEMPERATURE (°C)
150
-50
0.10
0
,T
OT
AL
ENERGY
LOSSES
(mJ)
0.05
15
25
-25
0
25
0.15
35
0.20
50
75
100
125
TJ = 125°C
VDD = 360 V
VGE = 15 V
IC = 3.0 A
2.0 A
1.0 A
VCC = 360 V
VGE = 15 V
RG = 20 W
IC = 3.0 A
2.0 A
1.0 A
0.10
E TS
Figure 9. Total Energy Losses versus
Collector Current
Figure 10. Turn–Off Losses versus
Gate Resistance
23
0
IC, COLLECTOR CURRENT (AMPS)
0.10
0
0.5
0.15
0.05
TJ = 125°C
VDD = 360 V
VGE = 15 V
RG = 20 W
1
1.5
,T
OT
AL
ENERGY
LOSSES
(mJ)
E TS
,T
OT
AL
ENERGY
LOSSES
(mJ)
E TS
0
0.25
0.30
50
0.25
0.05
0.20
0.25
510
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
800
400
200
0
Qg, TOTAL GATE CHARGE (nC)
5
0
20
16
12
4
0
10
C,
CAP
ACIT
ANCE
(pF)
15
25
20
25
15
8
V GE
,GA
TE-T
O-EMITTER
VOL
TAGE
(VOL
TS)
Cies
Coes
Cres
TJ = 25°C
VGE = 0 V
QT
Q2
Q1
TJ = 25°C
VCC = 300 V
IC = 3.0 A
600
20
45
5
RG, GATE RESISTANCE (OHMS)
0.2
0.1
,TURN-OFF
ENERGY
LOSSES
(mJ)
0
15
25
35
TJ = 125°C
VDD = 360 V
VGE = 15 V
IC = 3.0 A
2.0 A
1.0 A
E of
f
2.5
50
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