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參數(shù)資料
| 型號： | MGP4N60ED |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 6 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 121K |
| 代理商： | MGP4N60ED |
MGP4N60ED
3
Motorola IGBT Device Data
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 1.25 Adc)
(IEC = 1.25 Adc, TJ = 125°C)
(IEC = 2.5 Adc)
VFEC
—
1.7
1.3
2.0
—
2.3
Vdc
Reverse Recovery Time
trr
—
39
—
ns
(IF = 2.5 Adc,
VR = 360 Vdc
ta
—
15
—
VR = 360 Vdc,
dIF/dt = 200 A/ms)
tb
—
24
—
Reverse Recovery Stored Charge
dIF/dt
200 A/
ms)
QRR
—
51
—
nC
Reverse Recovery Time
(I
2 5 Adc
trr
—
68
—
ns
(IF = 2.5 Adc,
VR = 360 Vdc,
ta
—
21
—
VR = 360 Vdc,
dIF/dt = 200 A/ms,
TJ = 125°C)
tb
—
47
—
Reverse Recovery Stored Charge
TJ = 125°C)
QRR
—
115
—
nC
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25
″ from package to emitter bond pad)
LE
—
7.5
—
nH
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
8
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
15
6
3
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
I C
,COLLECT
OR
CURRENT
(AMPS)
0
24
I C
,COLLECT
OR
CURRENT
(AMPS)
TJ = 25°C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
12
9
6
8
0
15
6
3
0
24
TJ = 125°C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
12
9
6
13
17
5
VGE, GATE-TO-EMITTER VOLTAGE (VOLTS)
15
7.5
2.5
0
TJ, JUNCTION TEMPERATURE (°C)
-25
-50
2.0
1.8
1.6
1.4
0
15
I
V CE
,COLLECT
OR-T
O-EMITTER
VOL
TAGE
(VOL
TS)
7
9
11
25
50
100
75
125
150
,COLLECT
OR
CURRENT
(AMPS)
C
TJ = 125°C
25°C
VCE = 100 V
5 ms PULSE WIDTH
VGE = 15 V
80 ms PULSE WIDTH
IC = 3.0 A
1.5 A
2.0 A
5.0
12.5
10
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