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參數(shù)資料
| 型號(hào)： | MGP20N14CL |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | SMARTDISCRETES Internally Clamped, N-Channel IGBT |
| 中文描述： | 20 A, N-CHANNEL IGBT, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | MGP20N14CL |
1
Motorola, Inc. 1996
!
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features Gate–Emitter ESD protection, Gate–Collector overvoltage
protection from SMARTDISCRETES
monolithic circuitry for
usage as an
Ignition Coil Driver
.
Temperature Compensated Gate–Drain Clamp Limits Stress
Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessors
Low Saturation Voltage
High Pulsed Current Capability
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCGR
VGE
IC
ICM
CLAMPED
Vdc
Collector–Gate Voltage
CLAMPED
Vdc
Gate–Emitter Voltage
CLAMPED
Vdc
Collector Current — Continuous @ TC = 25
°
C
Collector Current
— Single Pulsed (tp =
10 s)
20
60
Adc
Apk
Total Power Dissipation @ TC = 25
°
C (TO–220)
Derate Above 25
°
C
PD
150
1.0
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 175
°
C
Single Pulse Collector–Emitter Avalanche Energy @ Starting TJ = 25
°
C
(VCC = 80 V, VGE = 5 V, Peak IL = 10 A, L = 10 mH)
500
mJ
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – (TO–220)
Thermal Resistance
— Junction to Ambient
RJC
RJA
1.0
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
TL
275
°
C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
SMARTDISCRETES and TMOS are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Order this document
by MGP20N14CL/D
SEMICONDUCTOR TECHNICAL DATA
20 AMPERES
VOLTAGE CLAMPED
N–CHANNEL IGBT
Vce(on) = 1.9 VOLTS
135 VOLTS (CLAMPED)
CASE 221A–06, Style 9
TO–220AB
G
C
E
C
G
E
REV 1
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