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參數(shù)資料
| 型號(hào)： | MGP20N35CL |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | SMARTDISCRETES Internally Clamped, N-Channel IGBT |
| 中文描述： | 20 A, 320 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 200K |
| 代理商： | MGP20N35CL |
1
Motorola, Inc. 1995
!
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features Gate–Emitter ESD protection, Gate–Collector overvoltage
protection from SMARTDISCRETES
monolithic circuitry for
usage as an
Ignition Coil Driver
.
Temperature Compensated Gate–Drain Clamp Limits Stress
Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessors
Low Saturation Voltage
High Pulsed Current Capability
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCGR
VGE
IC
ICR
PD
ESD
CLAMPED
Vdc
Collector–Gate Voltage
CLAMPED
Vdc
Gate–Emitter Voltage
CLAMPED
Vdc
Collector Current — Continuous @ TC = 25
°
C
20
Adc
Reversed Collector Current – pulse width
100 s
12
Apk
Total Power Dissipation @ TC = 25
°
C (TO–220)
Electrostatic Voltage — Gate–Emitter
150
Watts
3.5
kV
Operating and Storage Temperature Range
TJ, Tstg
–55 to 175
°
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – (TO–220)
Thermal Resistance
— Junction to Ambient
RJC
RJA
1.0
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
TL
275
°
C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS
Single Pulse Collector–Emitter Avalanche Energy
@ Starting TJ = 25
°
C
@ Starting TJ = 150
°
C
EAS
550
150
mJ
SMARTDISCRETES and TMOS are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Order this document
by MGP20N35CL/D
SEMICONDUCTOR TECHNICAL DATA
20 AMPERES
VOLTAGE CLAMPED
N–CHANNEL IGBT
Vce(on) = 1.8 VOLTS
350 VOLTS (CLAMPED)
CASE 221A–06, Style 9
TO–220AB
G
C
E
C
G
E
Rge
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