參數(shù)資料
型號: MGP19N35CL
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Ignition IGBT 19 Amps, 350 Volts(19A,350V鉗位電壓,點火絕緣柵雙極型晶體管(TO-220封裝))
中文描述: 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁數(shù): 5/12頁
文件大?。?/td> 72K
代理商: MGP19N35CL
MGP19N35CL, MGB19N35CL
http://onsemi.com
5
20
10
25
5
15
0
–50
30
TEMPERATURE (
°
C)
I
L = 2.0 mH
50
75
25
0
100
–25
125
150
175
VCC = 50 V
VGE = 5.0 V
RG = 1000
L = 3.0 mH
L = 6.0 mH
0
20
6
4
2
I
0
30
INDUCTOR (mH)
5
10
15
25
8
10
T = 25
°
C
T = 150
°
C
VCC = 50 V
VGE = 5.0 V
RG = 1000
10
S
μ
S
0
–50
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Switching Speed vs. Case
Temperature
Figure 8. Switching Speed vs. Collector
Current
S
μ
S
Figure 9. Minimum Open Secondary Latch
Current vs. Inductor
Figure 10. Minimum Open Secondary Latch
Current vs. Temperature
Figure 11. Typical Open Secondary Latch vs.
Inductor
INDUCTOR (mH)
Figure 12. Typical Open Secondary Latch vs.
Temperature
TEMPERATURE (
°
C)
I
I
14
TC, CASE TEMPERATURE (
°
C)
4
6
8
12
0
6
8
4
10
2
12
14
16
0
4
5
3
2
6
1
9
10
2
50
75
25
0
100
–25
125
150
VCC = 300 V
VGE = 5.0 V
RG = 1000
IC = 10 A
L = 300
μ
H
10
0
14
4
6
8
12
2
20
0
30
5
10
15
25
7
8
T = 25
°
C
T = 150
°
C
VCC = 50 V
VGE = 5.0 V
RG = 1000
L = 2.0 mH
VCC = 50 V
VGE = 5.0 V
RG = 1000
L = 3.0 mH
L = 6.0 mH
–50
50
75
25
0
100
–25
125
150
175
20
0
30
5
10
15
25
td(off)
tf
td(off)
tf
VCC = 300 V
VGE = 5.0 V
RG = 1000
TJ = 150
°
C
L = 300
μ
H
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