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參數(shù)資料
| 型號： | MGSF1P02LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Power MOSFET 750 mAmps, 20 Volts P-Channel(750mA，20V，P溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| 中文描述： | 750 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 82K |
| 代理商： | MGSF1P02LT1 |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 3
1
Publication Order Number:
MGSF1P02LT1/D
MGSF1P02LT1
Preferred Device
Power MOSFET
750 mAmps, 20 Volts
P–Channel SOT–23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc–dc converters and power management in portable
and battery–powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT–23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VGS
20
Vdc
Gate–to–Source Voltage – Continuous
±
20
Vdc
Drain Current
– Continuous @ TA = 25
°
C
– Pulsed Drain Current (tp
≤
10
μ
s)
Total Power Dissipation @ TA = 25
°
C
Operating and Storage Temperature
Range
ID
IDM
750
2000
mA
PD
400
mW
TJ, Tstg
– 55 to
150
°
C
Thermal Resistance – Junction–to–Ambient
R
θ
JA
TL
300
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10
seconds
260
°
C
3
1
2
Device
Package
Shipping
ORDERING INFORMATION
MGSF1P02LT1
SOT–23
3000 Tape & Reel
P–Channel
SOT–23
CASE 318
STYLE 21
http://onsemi.com
W
MARKING
DIAGRAM
PC
W
= Work Week
PIN ASSIGNMENT
3
2
1
Drain
Gate
2
1
3
Source
750 mAMPS
20 VOLTS
RDS(on) = 350 m
Preferred
devices are recommended choices for future use
and best overall value.
MGSF1P02LT3
SOT–23
10,000 Tape & Reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGSF2N02E | 2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2N02EL | 2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2N02ELT1 | 2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2N02ELT1G | 2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2N02ELT3 | 2.8 Amps, 20 Volts, N−Channel SOT−23 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGSF1P02LT3 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 20V 0.75A 3-Pin SOT-23 T/R |
| MGSF2N02E | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2N02EL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2N02ELT1 | 功能描述:MOSFET 20V 2.8A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MGSF2N02ELT1G | 功能描述:MOSFET NFET SOT23 20V 2.8A 85mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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