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參數(shù)資料
| 型號： | MGP15N43CL |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 15 A, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 70K |
| 代理商： | MGP15N43CL |
MGP15N43CL
2
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Clamp Voltage
(IC = 1.0 mA, TJ = – 40°C to 175°C)
V(BR)CES
—
430
—
Vdc
Zero Gate Voltage Collector Current
(VCE = 360 V, VGE = 0 V)
(VCE = 360 V, VGE = 0 V, TJ = 150°C)
ICES
—
10
150
Adc
Gate–Emitter Clamp Voltage
(IG = 5.0 mA)
V(BR)GES
17
—
22
Vdc
Gate–Emitter Leakage Current
(VGE = 10 V)
IGES
—
10
Adc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VGE = VCE, IC = 1.0 mA)
Threshold Temperature Coefficient (Negative)
VGE(th)
1.3
—
1.8
4.4
2.1
—
Vdc
mV/
°C
Collector–to–Emitter On–Voltage
(VGE = 3.5 V, IC = 6.0 A)
(VGE = 4.0 V, IC = 10 A, TJ = 150°C)
VCE(on)
—
2.0
1.8
Volts
Forward Transconductance
(VCE = 5.0 V, IC = 10 A)
gfe
8.0
20
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
15 V V
0 V
Cies
—
TBD
—
pF
Output Capacitance
(VCC = 15 V, VGE = 0 V,
f = 1.0 MHz)
Coes
—
TBD
—
Transfer Capacitance
f = 1.0 MHz)
Cres
—
TBD
—
SWITCHING CHARACTERISTICS (1)
Turn–Off Delay Time
(VCC = 400 V, IC = 6.5 A,
td(off)
—
TBD
—
mSec
Fall Time
( CC
, C
,
RG = 1.0 k, L = 300 mH)
tf
—
TBD
—
Turn–On Delay Time
(VCC = 10 V, IC = 6.5 A,
td(on)
—
TBD
—
mSec
Rise Time
( CC
, C
,
RG = 1.0 k, RL = 1.0 )
tr
—
TBD
—
Gate Charge
(V
350 V I
15 A
QT
—
TBD
—
nC
(VCC = 350 V, IC = 15 A,
VGE = 5.0 V)
Q1
—
TBD
—
VGE = 5.0 V)
Q2
—
TBD
—
(1) Pulse Test: Pulse Width
≤ 300 S, Duty Cycle ≤ 2%.
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