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參數(shù)資料
| 型號(hào)： | MGP15N43CL |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 15 A, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 70K |
| 代理商： | MGP15N43CL |
1
Motorola IGBT Device Data
Product Preview
Internally Clamped N-Channel IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features Gate–Emitter ESD protection, Gate Collector Over–
Voltage Protection from monolithic circuitry for usage as an Ignition
Coil Driver.
Temperature Compensated Gate – Collector Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
CLAMPED
Vdc
Collector–Gate Voltage
VCER
CLAMPED
Vdc
Gate–Emitter Voltage
VGE
CLAMPED
Vdc
Collector Current — Continuous
IC
15
Adc
Total Power Dissipation
Derate above 25
°C
PD
136
0.91
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 175
°C
UNCLAMPED COLLECTOR–TO–EMITTER AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse Collector–to–Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, PEAK IL = 14.2 A, L = 3.0 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, PEAK IL = 10 A, L = 3.0 mH, Starting TJ = 150°C
EAS
300
150
mJ
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Case
Thermal Resistance — Junction–to–Ambient
R
θJC
R
θJA
1.1
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 5 seconds
TL
260
°C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Order this document
by MGP15N43CL/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MGP15N43CL
15 AMPERES
N–CHANNEL IGBT
VCE(on) = 1.8 V
430 VOLTS
CLAMPED
CASE 221A–09
STYLE 9
TO–220AB
G
C
E
C
E
G
Motorola, Inc. 1998
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