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參數(shù)資料
| 型號(hào)： | MGP14N60E |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 18 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 125K |
| 代理商： | MGP14N60E |
1
Motorola, Inc. 1997
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. This new E–series introduces an Energy–efficient,
ESD protected, and short circuit rugged device.
Industry Standard TO–220 Package
High Speed: Eoff = 60 J/A typical at 125
°
C
High Voltage Short Circuit Capability – 10 s minimum at 125
°
C, 400 V
Low On–Voltage 2.0 V typical at 10 A, 125
°
C
Robust High Voltage Termination
ESD Protection Gate–Emitter Zener Diodes
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCGR
VGE
IC25
IC90
ICM
600
Vdc
Collector–Gate Voltage (RGE = 1.0 M
)
Gate–Emitter Voltage — Continuous
600
Vdc
±
20
Vdc
Collector Current — Continuous @ TC = 25
°
C
— Continuous @ TC = 90
°
C
— Repetitive Pulsed Current (1)
18
14
28
Adc
Apk
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
110
0.88
Watts
W/
°
C
Operating and Storage Junction Temperature Range
TJ, Tstg
tsc
–55 to 150
°
C
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125
°
C, RG = 20
)
10
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
R
θ
JC
R
θ
JA
1.1
65
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
TL
260
°
C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
Order this document
by MGP14N60E/D
SEMICONDUCTOR TECHNICAL DATA
IGBT IN TO–220
14 A @ 90
°
C
18 A @ 25
°
C
600 VOLTS
SHORT CIRCUIT RATED
LOW ON–VOLTAGE
CASE 221A–06
TO–220AB
C
E
G
G
C
E
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PDF描述 |
|---|---|
| MGP14N60E | SHORT CIRCUIT RATED LOW ON-VOLTAGE |
| MGP15N60U | Insulated Gate Bipolar Transistor |
| MGP15N60U | Insulated Gate Bipolar Transistor |
| MGP20N14CL | Internally Clamped, N-Channel IGBT |
| MGP20N14CL | SMARTDISCRETES Internally Clamped, N-Channel IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGP15N35CL | 功能描述:IGBT 晶體管 15A 350V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| MGP15N35CL_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK |
| MGP15N38CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Internally Clamped N-Channel IGBT |
| MGP15N40CL | 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| MGP15N40CL_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK |
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