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參數(shù)資料
| 型號(hào)： | MGFS45B2527B |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-60, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 189K |
| 代理商： | MGFS45B2527B |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS45B2527B
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHED GaAs FET
( 3 / 4 )
Sep. 2007
RF TEST FIXTURE
MITSUBISHI
ELECTRIC
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to
change.
Electrolytic condenser 330uF
C1,C6=1000pF
C3,C4=20pF
C2,C5=20pF
C7=470nF
C8=100nF
R1=CR10 10ohm
R2=CR10 51ohm
Board material :Teflon, t=0.8mm, Specific dielectric constant=2.6
UNIT:(mm)
IN-240A
2.8
AS432087
2.6
2.4
3.5
3.0
RF IN
Electrolytic condenser 330uF
C2
C3
R1
C8
C1
3.0
2.4
2.6
2.8
3.5
OUT-240A
AS432088
RF OUT
C5
C4
R2 C6
C7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFS45V2123 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET |
| MGFS45V2123A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| MGFS45V2123A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFS45V2123A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1-2.3 GHz BAND / 32W |
| MGFS45V2325 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET |
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