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參數(shù)資料
| 型號(hào)： | MGFS45B2527B |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-60, 2 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 189K |
| 代理商： | MGFS45B2527B |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS45B2527B
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHED GaAs FET
EVM(@WiMAX) vs . Pout characteristics
Test Condition
Vds=12V, Idq=0.9A, Ta=25deg.C
WiMAX : 64QAM-3/4,Bw=6MHz
freq. = 2.6GHz
freq. = 2.7GHz
EVM(@WiMAX) vs . Freq. characteristics
Test Condition： Vds=12V, Idq=0.9A, Pout=34dBm, Ta=25deg.C
WiMAX : 64QAM-3/4,Bw=6MHz
( 2 / 4 )
Sep. 2007
freq. = 2.5GHz
MITSUBISHI
ELECTRIC
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to
change.
0
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28 29 30 31 32 33 34 35 36 37 38 39 40
Pout (dBm)
E
V
M
(%
)
G
p
(d
B
)
0
5
10
15
20
25
30
35
40
E
D
(%
)
EVM
ED
Gp
0
1
2
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28 29 30 31 32 33 34 35 36 37 38 39 40
Pout (dBm)
E
V
M
(%
)
G
p
(d
B
)
0
5
10
15
20
25
30
35
40
E
D
(%
)
EVM
ED
Gp
0
1
2
3
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5
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10
11
12
13
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15
16
28 29 30 31 32 33 34 35 36 37 38 39 40
Pout (dBm)
E
V
M
(%
)
G
p
(d
B
)
0
5
10
15
20
25
30
35
40
E
D
(%
)
EVM
ED
Gp
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2.3
2.4
2.5
2.6
2.7
2.8
2.9
freq(GHz)
E
V
M
(%
)
5
6
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8
9
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11
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15
G
a
in
(d
B
)
EVM
Gain
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFS45V2123 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET |
| MGFS45V2123A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| MGFS45V2123A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFS45V2123A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1-2.3 GHz BAND / 32W |
| MGFS45V2325 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET |
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