- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄182059 > MGFS36E2325 2300 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER PDF資料下載
參數(shù)資料
| 型號： | MGFS36E2325 |
| 元件分類： | 放大器 |
| 英文描述： | 2300 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT PACKAGE-10 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 65K |
| 代理商： | MGFS36E2325 |
MITSUBISHI SEMICONDUCTOR
MGFS36E2325
Specifications are subject to change without notice.
2.3-2.5GHz HBT HYBRID IC
MITSUBISHI ELECTRIC CORP.
(6/6)
January-2008
HANDLING PRECAUTION
1)
Work desk, test equipment, soldering iron and worker should be grounded before mounting
and testing. Please note that electric discharge of GaAs HBT is much more sensitive than
that of Si transistor. Handling without ground possibly damages GaAs HBT.
2)
The surface of a board on which this product is mounted should be as flat and clean as possible
to prevent a substrate from cracking by bending this product.
3)
IR reflow soldering condition is confirmed following profile.
4)
Handling precaution at high temperature
This product has the structure of sealing with epoxy resin on grass epoxy substrate. This epoxy resin
gets soft if the temperature exceeds glass transition temperature=120degC, and the thermic
decomposition is occurred if the temperature exceeds 350degC. Therefore, in case of heating this
product, please keep the same heat profile as recommended reflow one.
Please note that crack, flaw or modification may be generated if softened epoxy resin part is handled
with tweezers and etc at high temperature.
5)
Cleaning condition
Please select after confirming administrative guidance, legal restrictions, and the mass of the residual
ion contaminant etc., and use it.
6)
After soldering, please remove the flux. Please take care that solvent does not penetrate into this
product.
7)
GaAs HBT contains As(Arsenic). This product should be dumped as particular industrial waste.
10sec
180+/-10degC
120+/-20sec
260degC
(PKG Surface temp.)
225degC
70sec
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGFX35V0005-01 | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFX35V0510-01 | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFX35V1722-01 | KU BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFX38V0005-01 | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGRB2018CTT4 | 10 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFS36E2325_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.3-2.5GHz HBT HYBRID IC |
| MGFS36E2527 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5-2.7GHz HBT HYBRID IC |
| MGFS36E2527_07 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5-2.7GHz HBT HYBRID IC |
| MGFS36E2527_08 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5-2.7GHz HBT HYBRID IC |
| MGFS36E2527_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5-2.7GHz HBT HYBRID IC |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。