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參數(shù)資料
| 型號： | MGFS36E2325 |
| 元件分類： | 放大器 |
| 英文描述： | 2300 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT PACKAGE-10 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 65K |
| 代理商： | MGFS36E2325 |
MITSUBISHI SEMICONDUCTOR
MGFS36E2325
Specifications are subject to change without notice.
2.3-2.5GHz HBT HYBRID IC
MITSUBISHI ELECTRIC CORP.
(2/6)
January-2008
ABSOLUTE MAXIMUM RATINGS (Ta=25
°C)
Symbol
Parameter
Conditions*
Value
Unit
Vc1, Vc2
Vc3, Vcb
Collector Supply Voltage
Pout
≤27.0dBm
8
V
Vref
Reference Voltage
Pout
≤27.0dBm
3
V
Vcont
ATT Control Voltage
Pout
≤27.0dBm
3.3
V
Ic1
80
mA
Ic2
Operation Current
Pout
≤27.0dBm
250
mA
Ic3
900
mA
Pin
Input Power
Pout
≤27.0dBm
5
dBm
-
Duty Cycle
Pout
≤27.0dBm
50
%
Tc(op)
Operation Temperature
Pout
≤27.0dBm
-30~+85
°C
Tstg
Storage Temperature
-
-40~+125
°C
*NOTE : Zin=Zout=50
Each maximum rating is guaranteed independently.
Please take care that MGFS36E2325 is operated under these conditions at the worst
case on your terminal.
ELECTRICAL CHARACTERISTICS (Ta=25
°C)
Symbol
Parameter
Test Conditions*
Limits
Unit
Min
Typ
Max
f
Frequency
-
2.3
2.5
GHz
Gp
Gain
Vc=6V, Vref=2.85V
33
dB
ηt
Efficiency
Pout=27dBm
11
%
EVM
64QAM OFDM Modulation
2.5
%
Vdet
Power Detector Voltage
Duty Cycle < 50%
2.0
V
ATT
Control Gain Step
Vcont=3V
17
dB
Ileak
Leakage Current
Vc=6V, Vref=0V
10
A
*NOTE : Zin=Zout=50
ESD RATING
- Class 1A (HBM)
MOISTURE SENSITIVITY LEVEL
- Level 3
THERMAL RESISTANCE
:
30
°C/W
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相關(guān)代理商/技術(shù)參數(shù) |
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| MGFS36E2325_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.3-2.5GHz HBT HYBRID IC |
| MGFS36E2527 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5-2.7GHz HBT HYBRID IC |
| MGFS36E2527_07 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5-2.7GHz HBT HYBRID IC |
| MGFS36E2527_08 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5-2.7GHz HBT HYBRID IC |
| MGFS36E2527_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5-2.7GHz HBT HYBRID IC |
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