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參數(shù)資料
| 型號： | MGFC45V3436A |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 208K |
| 代理商： | MGFC45V3436A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V3436A
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS
S parameters
( Ta=25deg.C , VDS=10(V),IDS=8(A) )
S-Parameter (TYP.)
f
S11
S21
S12
S22
(GHz)
Magn.
Angle(deg)
Magn.
Angle(deg)
Magn.
Angle(deg)
Magn.
Angle(deg)
3.30
0.54
-95
3.01
104
0.03
43
0.60
13
3.35
0.51
-121
3.27
87
0.03
29
0.56
3
3.40
0.49
-146
3.45
73
0.04
13
0.50
-6
3.45
0.50
-171
3.58
59
0.04
-12
0.44
-17
3.50
0.51
165
3.71
42
0.05
-21
0.39
-29
3.55
0.53
144
3.80
27
0.06
-37
0.34
-42
3.60
0.55
125
3.82
14
0.06
-52
0.29
-56
3.65
0.56
110
3.81
-1
0.06
-69
0.24
-74
3.70
0.56
93
3.84
-15
0.07
-80
0.22
-94
June/2004
P1dB,GLP vs. f
40
41
42
43
44
45
46
47
3.3
3.4
3.5
3.6
3.7
FREQUENCY f (GHz)
OUTPUT
POWER
P1dB
(dBm)
9
10
11
12
13
14
15
16
VDS=10V
IDS=8.0A
P1dB
GLP
LINEAR
POWER
GAIN
GLP
(dB)
Po,IM3 vs. f
24
26
28
30
32
34
36
38
40
42
16
18
20
22
24
26
28
30
INPUT POWER Pin (dBm S.C.L.)
OUTPUT
POWER
Po
(dBm
S.C.L.)
-70
-60
-50
-40
-30
-20
-10
0
10
20
IM3
Po
VDS=10V
IDS=8A
f1=3.600GHz
f2=3.605GHz
2-tone test
IM3
(dBc)
Po, P.A.E. vs. Pin
26
28
30
32
34
36
38
40
42
44
46
17
19
21
23
25
27
29
31
33
35
37
INPUT POWER Pin (dBm)
OUTPUT
POWER
Po
(dBm)
0
20
40
60
80
100
VDS=10V
IDS=8A
f=3.5GHz
Po
P.A.E.
POWER
ADDED
EFFICIENCY
(%)
MITSUBISHI
ELECTRIC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFC45V3436A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V3642A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V3642A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V4450A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V4450A_03 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
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