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參數(shù)資料
| 型號： | MGFC45V5964A |
| 元件分類： | 功率晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 259K |
| 代理商： | MGFC45V5964A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V5964A
5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC45V5964A is an internally impedance matched
GaAs power FET especially designed for use in 5.9 - 6.4
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally matched to 50 ohm system
High output power
P1dB = 32W (TYP.) @ f=5.9 - 6.4 GHz
High power gain
GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz
High power added efficiency
P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz
Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=34.5dBm S.C.L.
APPLICATION
5.9 - 6.4 GHz band power amplifier
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 8 (A)
Rg=25 (ohm)
Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Ratings
Unit
< Keep safety first in your circuit designs! >
VGDO
Gate to drain voltage
-15
V
Mitsubishi Electric Corporation puts the maximum effort into
VGSO
Gate to source voltage
-15
V
making semiconductor products better and more reliable,
ID
Drain current
25
A
but there is always the possibility that trouble may occur
IGR
Reverse gate current
-80
mA
with them. Trouble with semiconductors may lead to personal
IGF
Forward gate current
168
mA
injury, fire or property damage. Remember to give due
PT
Total power dissipation
150
W
consideration to safety when making your circuit designs,
Tch
Channel temperature
175
deg.C
with appropriate measures such as (1)placement of
Tstg
Storage temperature
-65 / +175
deg.C
substitutive, auxiliary circuits, (2)use of non-flammable
*1 : Tc=25 Deg.C
material or (3)prevention against any malfunction or mishap.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Test conditions
Limits
Unit
Min
Typ
Max
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
-
24
-
A
Gm
Transconductance
VDS = 3V , ID = 8A
-
8
-
S
VGS(off)
Gate to source cut-off voltage
VDS = 3V , ID = 160mA
-2
-
-5
V
P1dB
Output power at 1dB gain
compression
44
45
-
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=8A, f=5.9-6.4GHz
8
9
-
dB
PAE
Power added efficiency
-
33
-
%
IM3
3rd order IM distortion
*1
-42
-45
-
dBc
Rth(ch-c) Thermal resistance
*2
Delta Vf method
-
0.8
1.0
Deg.C/W
*1 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=6.4GHz,Delta f=10MHz *2 : Channel-case
MITSUBISHI
June/2004
ELECTRIC
2 4 + /- 0 .3
1 6 .7
2 0 .4 + /- 0 .2
O U T L IN E DR A W IN G U nit:m illim e te rs (inc he s )
G F -38
4
.3
+
/-
0
.4
1
.4
2
M
IN
R 1 .2
8
.0
+
/-
0
.2
1
7
.4
+
/-
0
.2
2
M
IN
( 1 )
(1) GATE
(2) SOURCE(FIANGE)
(3) D RAIN
( 3 )
0
.1
+
/-
0
.0
5
2
.4
+
/-
0
.2
( 2 )
0 .6 + /- 0 .15
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MGFC45V5964A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V6472A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V6472A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC47A4450 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET |
| MGFC47A7785 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET |
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