參數(shù)資料
型號(hào): MGFC41V3642
元件分類(lèi): 功率晶體管
英文描述: C BAND, GaAs, N-CHANNEL, RF POWER, JFET
封裝: HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 185K
代理商: MGFC41V3642
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC41V3642
3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
MITSUBISHI
June/2004
ELECTRIC
相關(guān)PDF資料
PDF描述
MGFC41V5964 C BAND, GaAs, N-CHANNEL, RF POWER, JFET
MGFC41V6472 C BAND, GaAs, N-CHANNEL, RF POWER, JFET
MGFC41V7785 X BAND, GaAs, N-CHANNEL, RF POWER, JFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MGFC41V3642_04 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
MGFC41V5964 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
MGFC41V5964_04 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
MGFC41V6472 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
MGFC41V7177 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET