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參數(shù)資料
| 型號： | MGFC41V3642 |
| 元件分類： | 功率晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 185K |
| 代理商： | MGFC41V3642 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC41V3642
3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC41V3642 is an internally impedence matched
OUTLINE DRAWING
Unit: millimeters (inches)
GaAs power FET especially designed for use in 3.6 - 4.2
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high raliability.
FEATURES
Internally matched to 50ohm system
High output power
P1dB = 14W (TIP.) @ f=3.6 - 4.2 Hz
High power gain
GLP = 12.5 dB (TYP.) @ f=3.6 - 4.2 GHz
High power added efficiency
Eadd = 40 % (TYP.) @ f=3.6 - 4.2 GHz
Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.
APPLICATION
item 01 : 3.6 - 4.2 GHz band power amplifier
item 51 : 3.6 - 4.2 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10(V)
(1): GATE
ID = 3.4 (A)
(2): SOURCE (FLANGE)
Rg = 50(ohm)
Refer to Bias Procedure
GF-18
(3): DRAIN
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-15
V
VGSO
Gate to source voltage
-15
V
ID
Drain current
12
A
IGR
Reverse gate current
-30
mA
IGF
Forward gate current
63
mA
PT
Total power dissipation *1
57.7
W
Tch
Channel temperature
175
DegreesC
Tstg
Storage temperature
-65 / +175
DegreesC
*1 : Tc=25 DegreesC
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Test conditions
Limits
Unit
Min
Typ
Max
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
-
12
A
gm
Transconductance
VDS = 3V , ID = 3.0A
-
3
-
S
VGS(off)
Gate to source cut-off voltage
VDS = 3V , ID = 30mA
-
-5
V
P1dB
Output power at 1dB gain
compression
40
41.5
-
dBm
GLP
Linear power gain
VDS = 10V , ID = 3.4A , f = 3.6 - 4.2 GHz
11
12.5
-
dB
ID
Drain current
-
3.3
-
A
Eadd
Power added efficiency
-
40
-
%
IM3 *2
3rd order IM distortion
-42
-45
-
dBc
Rth(ch-c)
Thermal resistance *1
Delta Vf method
-
2.8
deg.C/W
*1 : Channel to case
*2 : Item-51,2tone test,Po=30dBm Single Carrier Level,f=4.2GHz,Delta f=10MHz
MITSUBISHI
June/2004
ELECTRIC
4.0+/-0.4
1.4
2MIN
2.4+/-0.2
0.1
17.4+/-0.3
R1.25
2MIN
0.6+/-0.15
(1)
24+/-0.3
20.4+/-0.2
13.4
(3)
8.0+/-0.2
R1.2
15.8
(2)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFC41V3642_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC41V5964 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC41V5964_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC41V6472 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC41V7177 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET |
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