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參數(shù)資料
| 型號： | MGF4921AM |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, GaAs, P-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | GD-30, 4 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 173K |
| 代理商： | MGF4921AM |
MITSUBISHI SEMICONDUTOR
<GaAs FET>
MGF4921AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
MITSUBISHI
(6/9)
Ｍ
Ｍar./2009
(Reference data)
TYPICAL S PARAMETERS
(VDS=2V,ID=10mA,Ta=room temperature)
TYPICAL NOISE PARAMETERS
(VDS=2V,ID=10mA, Ta=room temperature)
Freq.
S11
S21
S12
S22
(GHz)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
2.0
0.873
-57.9
5.887
129.1
0.072
54.7
0.383
-50.0
2.2
0.853
-64.2
5.870
124.4
0.079
51.9
0.378
-54.0
2.4
0.833
-69.7
5.750
119.9
0.084
48.8
0.368
-58.7
2.6
0.818
-73.6
5.442
116.1
0.089
45.1
0.363
-65.0
2.8
0.795
-79.7
5.401
111.5
0.093
43.0
0.336
-68.9
3.0
0.769
-86.7
5.366
106.7
0.098
40.3
0.328
-73.9
3.2
0.752
-91.6
5.201
102.8
0.103
37.5
0.320
-78.7
3.4
0.737
-96.5
5.029
99.0
0.106
34.4
0.310
-84.8
3.6
0.714
-102.4
4.959
94.8
0.109
32.4
0.291
-89.1
3.8
0.694
-107.8
4.856
90.7
0.113
30.2
0.282
-93.1
4.0
0.680
-113.1
4.733
86.8
0.117
27.7
0.274
-98.2
4.2
0.667
-118.0
4.587
83.3
0.119
25.1
0.265
-104.0
4.4
0.648
-123.5
4.503
79.3
0.122
23.2
0.252
-108.7
4.6
0.634
-128.9
4.399
75.6
0.124
21.2
0.244
-113.4
4.8
0.621
-134.2
4.287
72.1
0.127
19.0
0.237
-118.8
5.0
0.612
-138.9
4.172
68.7
0.129
16.9
0.229
-124.4
5.2
0.602
-143.9
4.068
65.1
0.131
15.0
0.220
-130.1
5.4
0.591
-149.4
3.986
61.6
0.133
13.0
0.215
-135.6
5.6
0.583
-154.2
3.880
58.3
0.135
11.1
0.209
-140.4
5.8
0.577
-159.2
3.785
54.9
0.136
9.1
0.206
-147.0
6.0
0.569
-164.4
3.697
51.6
0.138
7.3
0.204
-152.6
Freq.
NFmin
Γopt
Rn
(GHz)
(dB)
(mag)
(ang)
( )
2.0
0.36
0.86
13.9
0.23
2.2
0.37
0.83
16.5
0.22
2.4
0.35
0.81
19.4
0.22
2.6
0.33
0.79
22.5
0.21
2.8
0.34
0.76
25.7
0.20
3.0
0.33
0.74
29.1
0.19
3.2
0.35
0.71
32.6
0.19
3.4
0.35
0.69
36.4
0.18
3.6
0.35
0.66
40.3
0.17
3.8
0.37
0.64
44.4
0.16
4.0
0.35
0.62
48.6
0.15
4.2
0.41
0.60
53.0
0.15
4.4
0.39
0.59
57.6
0.14
4.6
0.38
0.57
62.3
0.13
4.8
0.40
0.56
67.1
0.12
5.0
0.38
0.55
72.0
0.12
5.2
0.39
0.54
77.1
0.11
5.4
0.40
0.54
82.3
0.10
5.6
0.40
0.54
87.7
0.10
5.8
0.39
0.54
93.1
0.09
6.0
0.39
0.55
98.7
0.08
Board: εr=2.6 Teflon
Thickness: 0.4mm
(4-φ0.4: through-hole)
Reference point
0
.
9
6
45
Drain
Gate
2.5mm
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF4931AM | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) |
| MGF4934AM | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) |
| MGF4934AM_07 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) |
| MGF4934AM_08 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) |
| MGF4934BM | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) |
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