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參數(shù)資料
| 型號： | MGF4921AM |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, GaAs, P-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | GD-30, 4 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 173K |
| 代理商： | MGF4921AM |
MITSUBISHI SEMICONDUTOR
<GaAs FET>
MGF4921AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
MITSUBISHI
(3/9)
Ｍ
Ｍar./2009
(Reference data)
TYPICAL CHARACTERISTICS
(Ta=25°C)
ID vs. VDS
ID vs. VGS
VGS=~0.1V/STEP)
(VDS=2V)
NF & Gs vs. ID
NF & Gs vs. f
0
50
100
150
200
0
1
2
3
4
Drain to Source Voltage,VDS(V)
D
ra
in
C
u
rr
e
n
t,
ID
(m
A
)
0
50
100
150
200
-1.0
-0.5
0.0
Gate to Source Voltage,VGS(V)
D
ra
in
C
u
rr
e
n
t,
ID
(m
A
)
NF&Gs vs. ID
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
5
10
15
20
25
30
35
Drain Current,ID(mA)
N
o
is
e
F
ig
u
re
,N
F
(d
B
)
0
5
10
15
20
25
A
s
o
c
ia
te
d
G
a
in
,G
s
(d
B
)
Gs
NF
f=2.4GHz
VDS=2V
NF&Gs vs f
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.3
2.4
2.5
Frequency,f(GHz)
N
o
is
e
F
ig
u
re
,N
F
(d
B
)
0
5
10
15
20
25
A
s
o
c
ia
te
d
G
a
in
,G
s
(d
B
)
Gs
NF
VDS=2V
ID=10mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF4931AM | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) |
| MGF4934AM | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) |
| MGF4934AM_07 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) |
| MGF4934AM_08 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) |
| MGF4934BM | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) |
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