參數(shù)資料
型號(hào): MGF1952A-01
元件分類: 小信號(hào)晶體管
英文描述: KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
封裝: LEADLESS, CERAMIC PACKAGE-4
文件頁數(shù): 4/4頁
文件大?。?/td> 28K
代理商: MGF1952A-01
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF1952A
Medium Power Microwave MESFET
MITSUBISHI
1 Aug 2002
(4/4)
PRELIMINARY
S PARAMETERS (VDS=3V, ID=60mA, Ta=+25°C)
S11
S21
S12
S22
f
(GHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
K
MAG/MSG
(dB)
1
0.963
-32.6
6.695
154.5
0.024
72.0
0.314
-24.7
0.21
24.4
2
0.888
-66.5
6.024
128.4
0.043
52.3
0.297
-51.3
0.38
21.4
3
0.822
-89.7
5.294
110.6
0.056
42.0
0.281
-66.0
0.51
19.7
4
0.764
-114.3
4.599
93.5
0.065
32.3
0.259
-83.0
0.64
18.5
5
0.720
-132.8
4.030
79.6
0.071
24.2
0.254
-94.1
0.77
17.5
6
0.685
-149.2
3.591
67.1
0.075
19.2
0.250
-100.0
0.90
16.8
7
0.660
-165.2
3.243
54.4
0.079
14.0
0.247
-104.2
1.01
15.5
8
0.643
-179.8
2.993
42.2
0.082
9.4
0.243
-108.3
1.10
13.7
9
0.629
165.3
2.785
30.5
0.088
4.4
0.232
-111.5
1.15
12.6
10
0.624
150.0
2.614
18.5
0.095
-0.8
0.214
-115.4
1.17
11.9
11
0.618
133.3
2.460
6.4
0.099
-8.3
0.179
-119.8
1.25
11.0
12
0.620
115.8
2.310
-6.9
0.104
-14.8
0.137
-125.6
1.29
10.2
13
0.639
98.6
2.163
-19.8
0.107
-21.6
0.085
-134.3
1.32
9.6
14
0.670
81.9
2.017
-33.9
0.111
-30.5
0.025
-176.9
1.32
9.2
15
0.709
66.3
1.846
-47.2
0.113
-39.4
0.063
61.7
1.33
8.7
16
0.765
52.1
1.700
-60.1
0.113
-48.6
0.145
47.0
1.25
8.8
17
0.815
37.9
1.537
-73.9
0.112
-57.5
0.237
37.8
1.18
8.8
18
0.850
25.1
1.353
-88.1
0.109
-67.0
0.328
29.2
1.16
8.5
S-Parameter Reference Planes
Gate
Drain
Source
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