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參數(shù)資料
| 型號： | MGF1451A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | KU BAND, GaAs, P-CHANNEL, RF SMALL SIGNAL, MESFET |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 177K |
| 代理商： | MGF1451A |
MITSUBISHI SEMICONDUTOR
<GaAs FET>
MGF1451A
Low Noise MES FET
MITSUBISHI
(3/4)
Dec./2006
Decl/2006
S PARAMETERS
(Conditions:VDS=3V,IDS=30mA,Ta=25deg.C)
freq
S11
S21
S12
S22
K
MSG/MAG
(GHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag.
Angle
(dB)
1
0.986
-21.3
4.089
159.6
0.016
75.2
0.542
-15.9
0.17
24.1
2
0.953
-41.0
3.848
140.9
0.029
61.4
0.544
-31.0
0.30
21.2
3
0.921
-58.6
3.570
124.1
0.039
50.8
0.542
-43.3
0.40
19.6
4
0.886
-74.3
3.274
109.1
0.046
41.7
0.539
-52.9
0.51
18.5
5
0.850
-90.2
3.054
93.5
0.052
31.2
0.528
-64.5
0.64
17.7
6
0.810
-101.0
2.823
80.9
0.054
24.8
0.531
-72.5
0.82
17.2
7
0.784
-111.5
2.686
68.9
0.055
19.3
0.541
-79.2
0.93
16.9
8
0.748
-121.3
2.588
57.3
0.055
15.5
0.547
-85.4
1.08
14.9
9
0.714
-131.5
2.542
45.4
0.057
13.5
0.552
-91.2
1.17
14.0
10
0.667
-143.9
2.541
33.2
0.062
11.2
0.560
-96.6
1.18
13.5
11
0.606
-157.3
2.562
19.6
0.067
4.4
0.556
-103.4
1.27
12.7
12
0.521
-173.0
2.586
5.6
0.069
-4.9
0.544
-109.9
1.46
11.7
13
0.447
165.7
2.653
-9.6
0.073
-13.3
0.526
-117.9
1.52
11.4
14
0.386
134.3
2.686
-26.7
0.076
-23.5
0.496
-125.7
1.58
11.0
15
0.382
95.5
2.674
-45.2
0.078
-37.5
0.451
-135.0
1.60
10.8
16
0.460
57.9
2.619
-65.5
0.080
-54.5
0.379
-144.3
1.57
10.7
17
0.578
29.8
2.445
-86.0
0.080
-73.9
0.282
-154.0
1.54
10.5
18
0.688
8.2
2.224
-106.6
0.077
-95.0
0.169
-157.6
1.51
10.4
19
0.767
-8.0
1.979
-126.1
0.075
-117.1
0.060
-138.7
1.46
10.2
20
0.794
-20.5
1.736
-145.0
0.077
-140.2
0.083
-42.8
1.48
9.4
Bottom view (MGF1451A)
GaAs FET
1.1mm
Calibration point
Metal carrier
Gate
Drain
Microstrip line (Z0=50)
Substrate (Ceramics)
εr=9.8
GND
Calibration point
1.0mm
M etal carrier
①
②
③
①Gate
②Source
③Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGF1601B-01 | X BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| MGF1801B-01 | X BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| MGF1903B | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| MGF1908A | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| MGF1923 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF1601B | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF1601B_1 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MICROWAVE POWER GaAs FET |
| MGF1601B_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF1801 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MICROWAVE POWER GaAs FET |
| MGF1801B | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MICROWAVE POWER GaAs FET |
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