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參數(shù)資料
| 型號(hào)： | MGF1451A |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | KU BAND, GaAs, P-CHANNEL, RF SMALL SIGNAL, MESFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 177K |
| 代理商： | MGF1451A |
MITSUBISHI SEMICONDUTOR
<GaAs FET>
MGF1451A
Low Noise MES FET
MITSUBISHI
(1/4)
Dec./2006
Decl/2006
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C )
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-8
V
VGSO
Gate to source voltage
-8
V
ID
Drain current
120
mA
PT
Total power dissipation
300
mW
Tch
Channel temperature
175
°C
Tstg
Storage temperature
-55 to +175
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C )
Outline Drawing
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
DESCRIPTION
The MGF1451A is designed for use in S to Ku band power
amplifiers.
FEATURES
High gain and High P1dB
Glp=10.5dB , P1dB=13dBm (Typ.)
@ f=12GHz
APPLICATION
S to Ku band power Amplifiers
QUALITY GRADE
IG
Limits
Synbol
Parameter
Test conditions
MIN.
TYP.
MAX
Unit
V(BR)GDO
Gate to drain breakdown voltage
IG=-30μA
-8
--
V
V(BR)GSO
Gate to source breakdown voltage
IG=-30μA
-8
--
V
IGSS
Gate to source leakage current
VGS=-3V
--
10
uA
VDS=0V
IDSS
Saturated drain current
VGS=0V
35
60
120
mA
VDS=3V
VGS(off)
Gate to source cut-off voltage
VDS=3V
-0.3
-1.4
-3.5
V
ID=300μA
Glp
Linear Power Gain
VDS=3V
9.0
10.5
--
dB
ID=30mA
P1dB
Output Power at 1dB gain
f=12GHz
11.0
13.0
--
dBm
Compression
Rt.
Thermal Resistance
--
420
℃/W
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| MGF1601B-01 | X BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
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| MGF1903B | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| MGF1908A | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
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參數(shù)描述 |
|---|---|
| MGF1601B | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF1601B_1 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MICROWAVE POWER GaAs FET |
| MGF1601B_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF1801 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MICROWAVE POWER GaAs FET |
| MGF1801B | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MICROWAVE POWER GaAs FET |
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