參數(shù)資料
型號(hào): MGF0918A
元件分類: 功率晶體管
英文描述: S BAND, GaAs, N-CHANNEL, RF POWER, JFET
封裝: HERMETIC SEALED, SMD, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 43K
代理商: MGF0918A
Mitsubishi Electric
June/2004
MGF0918A TYPICAL CHARACTERISTICS
VDS=6V
ID=0.1A
f=1.9GHz
Po,Gp,PAE vs.Pin
0
5
10
15
20
25
30
35
-10
-5
0
5
10
15
Pin(dBm)
Po(dBm)
0
10
20
30
40
50
60
70
Gp(dB),PAE(%)
Vds=10V
Id(off)=150mA
f=1.9GHz
Po
Gp
PAE
Pi(SCL) vs.Po(SCL),IM3
-20
-15
-10
-5
0
5
10
15
20
25
30
-20
-15
-10
-5
0
5
10
15
Pin(SCL)(dBm)
Po(SCL)(dBm)
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
IM3(dBc)
VD=10V
ID=150mA
f1=1.90GHz
f2=1.91GHz
Po
IM3
相關(guān)PDF資料
PDF描述
MGF0920A-01 S BAND, GaAs, N-CHANNEL, RF POWER, JFET
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參數(shù)描述
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MGF0919A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ SMD non - matched ]
MGF0919A_05 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ SMD non - matched ]
MGF0919A_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)