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參數(shù)資料
| 型號： | MGF0911A |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-21, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 601K |
| 代理商： | MGF0911A |
MGF0911A
MITSUBISHI SEMICONDUCTOR
GaAs FET
9.4
2-R1.25
DESCRIPTION
The MGF0911A, GaAs FET with an N-channel schottky gate, is
designed for use in UHF band amplifiers.
FEATURES
Class A operation
High output power
P1dB=41dBm(TYP)
@2.3GHz
High power gain
GLP=11dB(TYP)
@2.3GHz
High power added efficiency
ηadd=40%(TYP)
@2.3GHz,P1dB
Hermetically sealed metal-ceramic package with ceramic lid
APPLICATION
UHF band power amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V
ID=2.6A
Rg=50
Refer to Bias Procedure
OUTLINE DRAWING
Unit:millimeters
GF-21
GATE
SOURCE(FLANGE)
DRAIN
3
2
1
Typ
Max
Min
Limits
Parameter
Test conditions
ELECTRICAL CHARACTERISTICS (Ta=25C)
Symbol
Unit
IDSS
VGS(off)
Saturated drain current
10
–
-5
A
S
V
–
3.0
dBm
dB
Gate to source cut-off voltage
–
41
11
-2
40
–
gm
ηadd
Transconductance
Power added efficiency at P1dB
Thermal resistance
*1
10
%
–
40
–
C/W
4.0
–
VDS=3V,VGS=0V
VDS=3V,ID=20mA
VDS=3V,ID=2.6A
VDS=10V,ID
2.6A,f=2.3GHz
ABSOLUTE MAXIMUM RATINGS (Ta=25C)
Symbol
Parameter
Ratings
175
VGDO
VGSO
PT
Tch
Tstg
Unit
Gate to source voltage
Gate to drain voltage
Total power dissipation
*1
Channel temperature
Storage temperature
-15
37.5
-65 to +175
V
W
C
ID
Drain current
10
A
IGR
IGF
Reverse gate current
Forward gate current
30
63
mA
*1:TC=25C
P1dB
GLP
Rth(ch-c)
Output power at 1dB gain
compression
Linear power gain
*2
Vf method
*1:Channel to case *2:Pin=25dBm
17.5
1.0
14.3
1
2
3
10.0
Mitsubishi Electric
June/2004
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGF0913A-01 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0913A-03 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0913A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0915A-01 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0915A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF0911A_1 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L, S BAND POWER GaAs FET |
| MGF0911A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0912A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0912A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0913A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ SMD non - matched ] |
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