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參數(shù)資料
| 型號(hào)： | MGF0913A-01 |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, SMD, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 44K |
| 代理商： | MGF0913A-01 |
Mitsubishi Electric
June/2004
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0913A
L & S BAND GaAs FET [ SMD non - matched ]
DESCRIPTION
The MGF0913A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm
High power gain
Gp=13dB(TYP.) @f=1.9GHz
High power added efficiency
ηadd=48%(TYP.) @f=1.9GHz,Pin=18dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V
Ids=200mA
Rg=500
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings
(Ta=25
°C)
Symbol
Parameter
Ratings
Unit
VGSO
Gate to sourcebreakdown voltage
-15
V
VGDO
Gate to drain breakdown voltage
-15
V
ID
Drain current
800
mA
IGR
Reverse gate current
-2.5
mA
IGF
Forward gate current
5.4
mA
PT
Total power dissipation
5.0
W
Tch
Cannel temperature
175
°C
Tstg
Storage temperature
-65 to +175
°C
Electrical characteristics
(Ta=25
°C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V,VGS=0V
400
550
800
mA
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=2.5mA
-1
-3
-5
V
gm
Transconductance
VDS=3V,ID=300mA
-
200
-
mS
Po
Output power
VDS=10V,ID=200mA,f=1.9GHz
29.5
31
-
dBm
ηadd
Power added Efficiency
Pin=18dBm
-
48
-
%
GLP
Linear Power Gain
VDS=10V,ID=200mA,f=1.9GHz
11
13
-
dB
NF
Noise figure
-
2.0
-
dB
Rth(ch-c)
Thermal Resistance
*1
Vf Method
-
20
30
°C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Fig.1
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