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參數(shù)資料
| 型號(hào)： | MGF0843G |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaN, N-CHANNEL, RF POWER, HEMFET |
| 封裝： | GF-7, 2 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 140K |
| 代理商： | MGF0843G |
Mitsubishi Semiconductors < GaN HEMT >
MGF0843G
20 W GaN HEMT [ non-matched ]
Nov. / 2010
2
CSTG-XXXXX
0.0
0.4
0.8
5 1015 20253035
Pin(dBm)
IDR
F
(A
)
0
5
10
15
20
25
30
35
40
45
50
P
o
(d
Bm
),
G
p(d
B)
0
10
20
30
40
50
60
70
80
90
100
Effi
ci
ency
(%)
Example of Circuit Schematic and Characteristics : f = 2.6 GHz
f=2.6GHz
VD=47V
IDQ=180mA
Ta=25deg.
Po
Effi
Gp
Example of circuit
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| MGF0919A | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| MGF0919A-03 | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF0846G | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaN HEMT (small signal gain stage) |
| MGF0904 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
| MGF0904A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
| MGF0904A_1 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
| MGF0904A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
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