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參數(shù)資料
| 型號： | MGF0805A |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, GF-50, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 114K |
| 代理商： | MGF0805A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
Mitsubishi Electric
Sept. / 2009
6
Output
Input
47uF
Z27
Z15
Z14
Z13
Z12
Z11
Z25
Z22
Z21
20pF
100
21nH
2pF
20pF
1000pF
51
-VG
+VD
MGF0805A
3pF
2pF
3pF
Z24
Z23
1pF
Z26
1000pF
Z11 to Z27 : Microstrip line ( L
× W, Unit: mm )
Z11 : 1.0
× 0.9
Z14 : 3.0
× 0.9
Z22 : 1.2
× 0.9
Z25 : 2.8
× 0.9
Z12 : 5.1
× 0.9
Z15 : 22.0
× 0.5
Z23 : 5.7
× 0.9
Z26 : 3.0
× 0.9
Z13 : 9.6
× 0.9
Z21 : 1.0
× 0.9
Z24 : 5.9
× 0.9
Z27 : 22
× 0.5
PCB : BT Resin,
εr = 3.4, Substrate thickness = 0.4 mm
Bias condition: VD = 10 V, IDQ = 400 mA,
Modulation signal: 3GPP TEST MODEL 1 ( W-CDMA )
0
5
10
15
20
25
30
35
40
510
15
20
25
Pin (dBm)
0
10
20
30
40
50
60
70
80
Gain
(dB)
11
12
13
14
15
16
17
18
19
Pout
(dBm)
PAE
( % )
Pout
Gain
PAE
0
5
10
15
20
25
30
35
40
510
15
20
25
Pin (dBm)
0
10
20
30
40
50
60
70
80
Gain
(dB)
11
12
13
14
15
16
17
18
19
11
12
13
14
15
16
17
18
19
Pout
(dBm)
PAE
( % )
Pout
Gain
PAE
Example of Circuit Schematic and Characteristics : f = 1.9 GHz
-70
-60
-50
-40
-30
-20
-10
0
15
20
25
30
35
Pout (dBm)
ACP
(dBc)
0
100
200
300
400
500
600
700
ID
(mA)
ACP
NACP
ID
-70
-60
-50
-40
-30
-20
-10
0
15
20
25
30
35
Pout (dBm)
ACP
(dBc)
0
100
200
300
400
500
600
700
ID
(mA)
ACP
NACP
ID
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF0805A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
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| MGF0846G | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaN HEMT (small signal gain stage) |
| MGF0904 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
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