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參數(shù)資料
| 型號(hào)： | MGF0805A |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, GF-50, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 114K |
| 代理商： | MGF0805A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
Mitsubishi Electric
Sept. / 2009
3
Freq.
(GHz)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
0.4
0.935 -149.9
7.946
99.7
0.0129
19.0
0.740 -176.7
0.6
0.942 -162.4
5.440
89.3
0.0132
14.1
0.740 -179.0
0.8
0.943 -169.6
4.092
82.2
0.0134
12.5
0.733
179.5
1.0
0.943 -174.7
3.279
76.7
0.0136
12.0
0.729
178.4
1.2
0.943 -178.5
2.743
71.7
0.0138
12.0
0.728
177.4
1.4
0.942
178.5
2.348
67.3
0.0140
12.7
0.732
176.8
1.6
0.939
175.8
2.050
63.0
0.0141
13.2
0.730
174.7
1.8
0.939
173.1
1.812
58.7
0.0142
14.3
0.741
173.8
2.0
0.937
170.5
1.639
53.8
0.0146
14.5
0.737
173.5
2.2
0.937
168.2
1.500
49.9
0.0151
14.9
0.739
172.7
2.4
0.935
166.2
1.379
46.0
0.0155
15.4
0.740
172.0
2.6
0.936
164.2
1.277
42.3
0.0159
15.4
0.745
171.2
2.8
0.935
162.3
1.192
38.5
0.0160
15.9
0.746
170.3
3.0
0.932
160.6
1.119
35.0
0.0163
17.6
0.750
169.3
3.2
0.934
158.6
1.059
31.4
0.0167
20.5
0.753
168.3
3.4
0.935
156.4
1.005
27.4
0.0182
21.4
0.755
167.0
3.6
0.933
154.4
0.955
23.6
0.0190
20.9
0.757
165.6
3.8
0.932
152.1
0.910
19.6
0.0199
20.5
0.758
164.2
4.0
0.931
149.8
0.870
15.7
0.0208
20.2
0.760
162.7
4.2
0.931
147.3
0.836
11.8
0.0215
20.1
0.761
161.0
4.4
0.929
144.6
0.808
7.9
0.0232
21.2
0.762
159.4
4.6
0.926
141.8
0.781
3.7
0.0249
19.2
0.764
157.8
4.8
0.924
138.9
0.757
-0.4
0.0263
17.3
0.763
156.0
5.0
0.920
137.5
0.742
-2.9
0.0281
17.4
0.767
156.5
S11
S21
S12
S22
S-parameters:
Condition: VD = 10 V, ID = 400 mA, Ta = 25 deg. C
Note : Reference plane is shown in Outline Drawing
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| MGF0805A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
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| MGF0904 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
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