參數(shù)資料
型號: MG800J2YS50A
元件分類: IGBT 晶體管
英文描述: 800 A, 600 V, N-CHANNEL IGBT
封裝: MODULE-11
文件頁數(shù): 7/9頁
文件大?。?/td> 171K
代理商: MG800J2YS50A
MG800J2YS50A
2004-10-01
7/9
Switching time – IC
Switching loss – IC
Collector current
IC (A)
Collector current
IC (A)
S
w
it
ch
ing
t
im
e
lo
ss
(
m
J
)
Switc
h
in
g
ti
m
e
(
s)
Re
ve
rse
rec
o
ve
ry
lo
ss
E
ds
w
(
m
J
)
Forward current
IF (A)
trr, Irr – IF
P
e
ak
re
v
e
rs
e
r
e
co
ver
y
cu
rr
ent
I rr
(A
)
R
e
ve
rse
rec
o
ve
ry
ti
me
t rr
(ns
)
Forward current
IF (A)
Edsw – IF
Eon
1
100
900
0
10
600
200
400
Common emitter
VCC = 300 V
VGE = ±15 V
Tj = 25°C
RG = 4.7
Tj = 125°C
100
500
800
300
700
3
5
30
50
Eoff
Common cathode
di/dt
= 2000 A/s
VGE = ±15 V
Tj = 25°C
VCC = 300 V
Tj = 125°C
1
1000
800
0
100
600
200
400
10
trr
Irr
Common cathode
di/dt
= 2000 A/s
VGE = 10 V
Tj = 25°C
VCC = 300 V
Tj = 125°C
1
1000
800
0
100
600
200
400
10
toff
td (on)
ton
10
10000
900
0
100
600
200
400
1000
Common emitter
VCC = 300 V
VGE = ±15 V
Tj = 25°C
RG = 4.7
Tj = 125°C
100
500
800
300
700
tr
tf
td (on)
相關(guān)PDF資料
PDF描述
MG8N6ES42 8 A, 1000 V, N-CHANNEL IGBT
MG50J6ES45 50 A, 600 V, N-CHANNEL IGBT
MG15N6ES42 15 A, 1000 V, N-CHANNEL IGBT
MG25J2YS9 25 A, 600 V, N-CHANNEL IGBT
MG25J6ES40 25 A, 600 V, N-CHANNEL IGBT
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