參數(shù)資料
型號(hào): MG800J2YS50A
元件分類: IGBT 晶體管
英文描述: 800 A, 600 V, N-CHANNEL IGBT
封裝: MODULE-11
文件頁(yè)數(shù): 6/9頁(yè)
文件大小: 171K
代理商: MG800J2YS50A
MG800J2YS50A
2004-10-01
6/9
100
10000
16
2
1000
500
3000
12
6
8
300
5000
Eoff
Eon
Common emitter
VCC = 300 V
VGE = ±15 V
Tj = 25°C
IC = 800 A
Tj = 125°C
4
10
14
Sw
it
ch
ing
t
im
e
lo
ss
(
m
J
)
Forward voltage
VF (V)
IF – VF
F
o
rw
a
rd
cu
rr
e
n
t
I
F
(A)
Gate
-e
mitt
er
v
o
ltag
e
V
GE
(
V
)
Charge
QG (nC)
VCE, VGE – QG
Co
lle
c
to
r-
e
m
itte
rvo
lt
a
g
e
V
CE
(
V
)
Gate resistance
RG ()
Switching time – RG
Switc
h
in
g
ti
m
e
(
s)
Gate resistance
RG ()
Switching time – RG
td (on)
100
10000
16
2
1000
500
3000
14
6
10
300
5000
toff
td (off)
ton
tr
tf
Common emitter
VCC = 300 V
VGE = ±15 V
Tj = 25°C
IC = 800 A
Tj = 125°C
12
4
8
0
400
50
4000
0
200
Common emitter
RL = 0.375
Tj = 25°C
150
300
3000
1000
2000
100
250
350
0
16
2
8
6
12
4
10
14
VCE = 0
100
300
200
Tj = 25°C
0
900
100
5
0
2.5
400
4
800
Common cathode
VGE = 0 V
300
600
1.5
3
4.5
0.5
2
200
500
700
125
1
3.5
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