參數(shù)資料
型號: MG400V2YS60A
元件分類: IGBT 晶體管
英文描述: 400 A, 1700 V, N-CHANNEL IGBT
封裝: 2-126A2A, 11 PIN
文件頁數(shù): 8/10頁
文件大小: 317K
代理商: MG400V2YS60A
MG400V2YS60A
2003-08-21
7
Gate resistance RG ()
Short Circuit
tw – RG
P
ul
se
w
idt
h
t w
(s
)
16
0
12
8
4
8
12
16
Edsw – IF
Forward crrent IF (A)
Revers
erec
overy
lo
ss
E
dsw
(
m
J)
100
1
0
200
300
400
10
100
Common cathode
di / dt = 2000A /
s
VGE = 10V
VCC = 900V
: Tj = 25°C
: Tj = 125°C
Rth(j-c) – tw
Pulse width tw (s)
T
rans
ie
nt
ther
m
al
re
si
st
anc
e
R
th(j
-c
)
(
°C
/
W
)
1
0.0005
0.001
0.01
0.1
10
0.01
1
0.1
0.001
Tc = 25°C
Diode stage
Transistor stage
Short Circuit Soa
Collector-emitter voltage VCE (V)
Col
le
ct
or
c
urrent
I C
(A
)
10000
10
0
100
1200
1600
2000
1000
800
400
VCC = 900V
RG = 8.2
VGE = ±15V
tw ≤ 10s
Tj
≤ 125°C
VCC = 1200V
VGE =±15V
Tj = 125°C
trr, Irr – IF
P
eak
revers
erec
overy
c
urrent
I rr
(
A
)
Revers
erec
overy
t
im
e
t rr
(
ns
)
Forward crrent IF (A)
1000
10
0
200
300
400
100
trr
Irr
Common cathode
di / dt = 2000A /
s
VGE = 10V
VCC = 900V
: Tj = 25°C
: Tj = 125°C
C – VCE
Collector-emitter voltage VCE (V)
Capac
itan
ce
C
(pF)
100000
300
0.1
3000
30000
1000
3
10
100
1
30
10000
0.3
Cies
Coes
Cres
Common emiter
VGE = 0
F = 1MHz
Tj = 25°C
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