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參數(shù)資料
| 型號(hào)： | MG400V2YS60A |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 400 A, 1700 V, N-CHANNEL IGBT |
| 封裝： | 2-126A2A, 11 PIN |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 317K |
| 代理商： | MG400V2YS60A |
MG400V2YS60A
2003-08-21
3
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector
emitter voltage
VCES
1700
V
Gate
emitter voltage
VGES
±20
V
Collector current
DC
IC
400
A
Forward current
DC
IF
400
A
Collector power dissipation
(Tc = 25°C)
PC
4300
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40~125
°C
Isolation voltage
VIsol
4000
(AC 1 min)
V
Terminal: M8
―
10
Nm
Screw torque
Mounting: M5
―
3
Nm
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Gate leakage current
IGES
VGE = ±20V, VCE = 0V
―
±10
A
Collector cut
off current
ICES
VCE = 1700V, VGE = 0V
―
1
mA
Gate
emitter cutoff voltage
VGE(off)
IC = 400mA, VCE = 5V
4.5
5.5
6.5
V
Tj = 25°C
―
3.0
3.4
Collector
emitter saturation
voltage
VCE(sat)
IC = 400A
VGE = 15V
Tj = 125°C
―
3.8
4.2
V
Input capacitance
Cies
VCE = 10V, VGE = 0V,
f = 1MHz
―
45000
―
pF
Gate
emitter voltage
VGE
―
13
15
17
V
Gate resistance
RG
―
8.2
―
15
Turn
on delay time
td(on)
―
0.35
―
Rise time
tr
―
0.2
―
Turn
on time
ton
―
0.55
―
Turn
off delay time
td(off)
―
0.9
―
Fall time
tf
―
0.4
0.6
Switching
time
Turn
off time
toff
Inductive load
VCC = 900V
IC = 400A
VGE = ±15V
RG = 8.2
(Note)
―
1.3
―
s
Tj = 25°C
―
3.2
4.2
Forward voltage
VF
IF = 400A,
VGE = 0V
Tj = 125°C
―
2.4
―
V
Reverse recovery time
trr
IF = 400A, VGE = 15V
di/dt = 2000A/s
―
0.20
0.40
s
Transistor stage
―
0.029
Thermal resistance
Rth(jc)
Diode stage
―
0.056
°C / W
RTC operating current
Irtc
Tj = 25°C
800
―
A
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