參數(shù)資料
型號(hào): MG400Q2YS60A
元件分類: IGBT 晶體管
英文描述: 400 A, 1200 V, N-CHANNEL IGBT
封裝: 2-123C1B, 11 PIN
文件頁(yè)數(shù): 8/9頁(yè)
文件大?。?/td> 0K
代理商: MG400Q2YS60A
MG400Q2YS60A
2003-08-05
8
Colle
ct
or
curr
ent
I C
(A
)
Colle
ct
or
curr
ent
I C
(A
)
Forward current IF (A)
Irr, trr – IF
Re
ver
se
r
eco
ver
yti
m
e
t rr
(n
s)
Re
ver
se
r
eco
ver
yc
urrent
I rr
(A)
Forward current IF (A)
Edsw – IF
Re
ver
se
r
eco
ver
yl
oss
E
dsw
(mJ)
Collector-emitter voltage VCE (V)
C – VCE
C
ap
aci
ta
nc
e
C
(p
F
)
Collector-emitter voltage VCE (V)
Safe-operating area
Collector-emitter voltage VCE (V)
Reverse bias SOA
Pulse width tw (s)
Rth – tw
R
th
(j-c)
(
°C
/W
)
10
0
100
200
300
400
100
1000
Common cathode
VCC = 600 V
RG = 5.1
Tj = 25°C
VGE = ±15 V
Tj = 125°C
trr
Irr
1
0
100
200
300
400
10
100
Common cathode
VCC = 600 V
RG = 5.1
Tj = 25°C
VGE = ±15 V
Tj = 125°C
100
0.01
0.1
1
10
100
1000
10000
100000
Common emitter
VGE = 0 V
f
= 1 MHz
Tj = 25°C
Cies
Coes
Cres
1
10
100
1000
10000
10
100
1000
IC max (pulsed)*
*: Single
nonrepetitive
pulse Tc
= 25°C
Curves must be
derated linearly
with increase in
temperature.
IC max
(continuous)
100
s
50
s
1 ms
0
200
600
800
400
800
1200
400
Tj <= 125°C
RG = 5.1
VGE = ±15 V
0.001
0.01
0.1
1
10
0.01
0.1
1
Diode stage
Transistor stage
TC = 25°C
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