參數(shù)資料
型號: MG400Q2YS60A
元件分類: IGBT 晶體管
英文描述: 400 A, 1200 V, N-CHANNEL IGBT
封裝: 2-123C1B, 11 PIN
文件頁數(shù): 7/9頁
文件大?。?/td> 0K
代理商: MG400Q2YS60A
MG400Q2YS60A
2003-08-05
7
SW
tim
e
(n
s)
SW
lo
ss
E
on
,E
of
f
(
m
J)
Forward voltage VF (V)
IF – VF
Forward
curren
t
I
F
(A
)
Gate-emi
tter
volt
ag
e
V
GE
(V)
Charge QG (nC)
VCE, VGE – QG
Colle
ctor-emi
tter
vo
ltage
V
CE
(V
)
Gate resistance RG ()
SW time – RG
SW
tim
e
(n
s)
Gate resistance RG ()
Eon, Eoff – RG
Collector current IC (A)
SW time – IC
Collector current IC (A)
Eon, Eoff – IC
SW
lo
ss
E
on
,E
of
f
(
m
J)
5
25°C
40°C
0
1
400
600
2
3
4
200
800
Common cathode
VGE = 0 V
Tj = 125°C
0
1000
3000
200
400
600
800
1000
0
4
8
12
16
20
2000
600 V
Common emitter
RL = 1.5
Tj = 25°C
400 V
200 V
VCC = 0 V
10
0
5
10
15
20
100
1000
10000
toff
ton
td (on)
tr
tf
td (off)
Common emitter
VCC = 600 V
IC = 400 A
Tj = 25°C
VGE = ±15 V
Tj = 125°C
10
0
5
10
15
20
100
1000
Eoff
Eon
Common emitter
VCC = 600 V
IC = 400 A
Tj = 25°C
VGE = ±15 V
Tj = 125°C
10
0
100
200
300
400
100
1000
10000
toff
ton
td (on)
tr
tf
td (off)
Common emitter
VCC = 600 V
RG = 5.1
Tj = 25°C
VGE = ±15 V
Tj = 125°C
1
0
100
200
300
400
10
100
Common emitter
VCC = 600 V
RG = 5.1
Tj = 25°C
VGE = ±15 V
Tj = 125°C
Eoff
Eon
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