- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄182057 > MG150J1ZS50 150 A, 600 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號(hào)： | MG150J1ZS50 |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 2-95A3A, 5 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 0K |
| 代理商： | MG150J1ZS50 |
MG150J1ZS50
2001-08-16
1
TOSHIBA GTR Module Silicon N Channel IGBT
MG150J1ZS50
High Power Switching Applications
Motor Control Applications
The electrodes are isolated from case.
High input impedance
Includes a complete half bridge in one package.
Enhancement-mode
High speed : tf = 0.30s (max) (IC = 150A)
trr = 0.15s (max) (IF = 150A)
Low saturation voltage
: VCE (sat) = 2.70V (max) (IC = 150A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±20
V
Reverse voltage
VR
600
V
DC
IC
150
Collector current
1ms
ICP
300
A
DC
IF
150
Forward current
1ms
IFM
300
A
Collector power dissipation (Tc = 25°C)
PC
780
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 ~ 125
°C
Isolation voltage
VIsol
2500
(AC 1 min.)
V
Screw torque (Terminal / mounting)
―
3 / 3
Nm
JEDEC
―
JEITA
―
TOSHIBA
2-95A3A
Unit: mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MG150J2YS50 | 150 A, 600 V, N-CHANNEL IGBT |
| MG150J7KS60 | 150 A, 600 V, N-CHANNEL IGBT |
| MG150Q2YK1 | 150 A, 900 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| MG150Q2YS50 | 200 A, 1200 V, N-CHANNEL IGBT |
| MG150Q2YS51 | 200 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MG150J2YS1 | 制造商:n/a 功能描述:IGBT Module |
| MG150J2YS11 | 制造商:n/a 功能描述:IGBT Module |
| MG150J2YS40 | 制造商:n/a 功能描述:_ |
| MG150J2YS50 | 制造商:Toshiba America Electronic Components 功能描述:7th Generation 600V IGBT |
| MG150J7KS50 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA GTR Module Silicon N Channel IGBT |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。