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參數(shù)資料
| 型號： | MG1200V1US51 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 1200 A, 1700 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 79K |
| 代理商： | MG1200V1US51 |
MG1200V1US51
MG1800V1US51
Rating
Characteristic
Symbol
Unit
Characteristic
Symbol
Unit
Max
Typ.
Min
Maximum Ratings (Ta = 125
°C)
Electrical characteristics (Ta = 125
°C)
V
A
N m
°C
Collector-emitter voltage
VCES
1700
Gate-emitter voltage
VGES
±20
Junction temperature
Tj
Storage temperature
Tstg
Collector power dissipation (Ta = 25
°C)
PC
5550
8300
W
Isolation voltage
Visol
5400 V (AC 1 minute)
V
Collector current
Forward current
DC
IC
1200
1800
1 ms
ICP
2400
3600
DC
IF
1200
1800
1 ms
IFM
2400
3600
Screw torque
Power terminal: M4/M8
2 / 7
Mounting
4
– 40 to 125
Gate-emitter cut-off voltage
VGE(off)
IC = Rating, VCE = 5V
3.0
–
7.0
Collector-emitter saturation voltage
VCE(sat)
IC = Rating, VGE = 15V
–
4.2
–
V
Forward voltage
VF
IF = Rating, VGE = 0
–
2.7
–
MG1200V1US51
–
0.018
MG1800V1US51
–
0.012
MG1200V1US51
–
0.035
MG1800V1US51
–
0.023
Thermal resistance (junction-fin)
(Tc = 25
°C)
Rth(j-c)
Transistor part
Diode part
°C/W
Test condition
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