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參數(shù)資料
| 型號： | MG1200V1US51 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 1200 A, 1700 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 79K |
| 代理商： | MG1200V1US51 |
Photograph showing external appearance
Outline
Package Demensions
Features
Unit: mm
6-7
4-57
7
29
4-M8
3-M4
121
43.5
18
16
114
128
130
16.5 2.5
20
4
24
26
28
36
38
8
20
124
132
28
12.5
30
124
138
12.5
35
11
14.5
5
q NPT structure results in a full square safe operating area.
q New lifetime-control improves switching loss (Eoff) - saturation voltage (VCE(sat))
characteristics.
q Package conforms to high CTI standards for package surface dielectric strength (250 V).
q A base plate with a low thermal coefficient of expansion substantially improves such life
characteristics as product thermal fatigue and the power cycle.
High-capacity, high-breakdown-voltage IGBT (Insulated-Gate Bipolar Transistor) power devices for power
transformers and variable-speed motor control inverters are crucial components in many contemporary day-
to-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with
commercial AC power supply voltages.
In response to user demands, Toshiba have developed and launched a large-scale, High-Voltage, High-
Current (HVHC) IGBT module with enhanced capabilities, designed to improve efficiency and reliability.
The IGBT module achieves low power dissipation and high reliability by means of a non-punch-through (NPT)
structure, a new lifetime-control system, conformance with high CTI standards which offer improved package
surface dielectric strength, and the use of a base plate with a low thermal coefficient of expansion. These
factors allow the device to satisfy requirements for expansion of system capacity and high reliability.
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