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參數(shù)資料
| 型號(hào)： | MDS170L |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 55KT, 2 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 265K |
| 代理商： | MDS170L |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
MDS170L
170 Watts, 36 Volts, Pulsed
Avionics 1030/1090 MHz
GENERAL DESCRIPTION
The MDS170L is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030 - 1090 MHz. The
transistor includes input and output prematch for broadband performance. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. Low thermal resistance Solder Sealed Package reduces
junction temperature, extends life.
CASE OUTLINE
55KT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
350 Watts
o2
Maximum Voltage and Current
BVces
Collector to Base Voltage
50 Volts
BVebo
Emitter to Base Voltage
3.5 Volts
Ic
Collector Current
15 Amps
Maximum Temperatures
Storage Temperature
- 65 to + 200 C
o
Operating Junction Temperature
+ 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1030 - 1090 MHz
Vcc = 36 Volts
PW = Note 1
DF = Note 1
F = 1030 MHz
170
7
40
34
10:1
Watts
dB
%
BVebo
BVces
hFE
θjc2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
Ie = 20 mA
Ic = 20 mA
Ic = 20 mA, Vce = 5 V
20
0.5
Volts
C/W
o
Note 1: MODE- S Pulse Burst, 120
s at 50% Duty, Long term duty = 5%.
2: At rated pulse conditions
Initial Issue January, 1996
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