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參數(shù)資料
| 型號(hào)： | MDS550L |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 55ST-1, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 192K |
| 代理商： | MDS550L |
MDS550L
550 Watts, 45 Volts
Pulsed Avionics at 1030/1090 MHz
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
The MDS550L is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems at 1030 and 1090 MHz, with the pulse width and
duty required for MODE-S ELM (extended length message) applications. The
device has gold thin-film metalization and emitter ballasting for proven highest
MTTF.
The transistor includes input and output prematch for broadband
capability.
Low thermal resistance package reduces junction temperature,
extends life.
CASE OUTLINE
55ST-1
(Common Base)
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25
°C1
1750 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
65 V
Emitter to Base Voltage (BVebo)
4.5 V
Collector Current (Ic)
100 A
Maximum Temperatures
Storage Temperature
-65 to +200
°C
Operating Junction Temperature
+200
°C
ELECTRICAL CHARACTERISTICS @ 25
°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX UNITS
Pout
Power Out
550
W
Pg
Power Gain
Vcc = 45 Volts, Pin=70 W,
F = 1030/1090 MHz, Note 1
9.0
dB
ηc
Collector Efficiency
45
%
RL
Return Loss
-12
dB
Tr
Rise Time
100
ns
Pd
Pulse Droop
0.5
1.0
dB
VSWR
Load Mismatch Tolerance1
F = 1030 MHz, Vcc = 45 Volts
3.0:1
FUNCTIONAL CHARACTERISTICS @ 25
°C
BVebo
Emitter to Base Breakdown
Ie = 50 mA
3.5
V
BVces
Collector to Emitter Breakdown Ic = 100 mA
65
V
hFE
DC – Current Gain
Vce = 5V, Ic = 5A
20
θjc1
Thermal Resistance
0.16
°C/W
NOTE:
1. At rated output power and pulse conditions (32 s on / 18 s off x 48 , 23 ms burst period)
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
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